An optical device includes: a substrate having a first surface, and a second surface opposite of the first surface; a plurality of surface emitting laser elements provided on the first surface of the substrate and configured to emit light in a direction intersecting the first surface; a plurality of optical elements disposed on the second surface so as to respectively correspond to the plurality of surface emitting laser elements; and an anti-reflection structure between the substrate and the plurality of optical elements.

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

A laser device is provided. The laser device includes a bottom plate, a frame body, a heat sink and a light-emitting chip. The light-emitting chip is located on a surface of the heat sink away from the bottom plate. The light-emitting chip includes a plurality of first protrusions and/or a plurality of first depressions, the plurality of first protrusions and/or the plurality of first depressions are located on a first surface of the light-emitting chip; the heat sink includes a plurality of second depressions and/or a plurality of second protrusions, the plurality of second depressions and/or the plurality of second protrusions are located on a second surface of the heat sink; the plurality of first protrusions are located in the plurality of second depressions, and the plurality of second protrusions are located in the plurality of first depressions.

A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate having a first surface and a second surface that are opposed to each other; a first semiconductor layer that is stacked on the first surface of the semi-insulating substrate and has a lattice plane non-continuous to the semi-insulating substrate; and a semiconductor stacked body that is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The first semiconductor layer has a first electrical conduction type. The semiconductor stacked body has a light emitting region configured to emit laser light.

A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

A laser light source includes: a laser diode chip including an emission layer, a substrate supporting the emission layer, and an emission end surface; a submount that includes a principal surface on which the laser diode chip is fixed and a pair of lens supports located at opposite sides with respect to the emission end surface of the laser diode chip; a lens bonded to the end surfaces of the pair of lens supports; and a semiconductor laser package housing the aforementioned elements. The laser diode chip is fixed to the submount with the emission layer being closer to the submount than is the substrate. The emission end surface of the laser diode chip is located outward with respect to an edge of the principal surface. The end surfaces of the pair of lens supports are located outward with respect to the first end surface of the laser diode chip.