A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A method of manufacturing a light emitting module comprising at least one light emitting device in which a plurality of light emitting elements are mounted, includes: providing a plurality of light emitting devices including one or more first light emitting devices and one or more second light emitting devices, wherein a number of the light emitting elements mounted in the first light emitting device is different from a number of the light emitting elements mounted in the second light emitting device; providing a first mounting substrate having a mounting surface provided with a plurality of connection patterns having the same pattern, each of the connection patterns corresponding to a respective one of the light emitting devices; and mounting at least some of the plurality of light emitting devices, selected from the one or more first light emitting devices and one or more second light emitting devices, on the connection patterns.

A method of manufacturing a light emitting module comprising at least one light emitting device in which a plurality of light emitting elements are mounted, includes: providing a plurality of light emitting devices including one or more first light emitting devices and one or more second light emitting devices, wherein a number of the light emitting elements mounted in the first light emitting device is different from a number of the light emitting elements mounted in the second light emitting device; providing a first mounting substrate having a mounting surface provided with a plurality of connection patterns having the same pattern, each of the connection patterns corresponding to a respective one of the light emitting devices; and mounting at least some of the plurality of light emitting devices, selected from the one or more first light emitting devices and one or more second light emitting devices, on the connection patterns.

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

A semiconductor device includes a substrate, an epitaxial stack disposed on the substrate, a first connection layer between the epitaxial stack and the substrate and a first electrode disposed on the first connection layer. The substrate has a first side surface and a second side surface. The epitaxial stack has a semiconductor structure with a first lateral surface adjacent to the first side surface and a second lateral surface opposing the first lateral surface and adjacent to the second side surface. The first connection layer has a first protruding portion extending beyond the first lateral surface and a second protruding portion extending beyond the second lateral surface. The first electrode is in contact with the first protruding portion and the second protruding portion.

Provided is a thermoelectric cooler built-in stem, including a first stem member on a top face of which a temperature controlled target device such as an optical module or the like is mounted, a second stem member which opposes to the first stem member each other, and a thermoelectric cooler being sandwiched between the first stem member and the second stem member, for controlling the temperature controlled target device, whereby a space between the first stem member and the second stem member is filled by an insulating resin whose thermal conductivity is low.