A light emitting device includes: at least one semiconductor laser element; a submount; and a base portion having a mounting surface. The submount includes: a first lateral face being located at a side of an exiting lateral surface of the semiconductor laser element, the first lateral face intersecting the upper face of the submount, and the first lateral face being above and separated from the mounting surface; a lower face being set back inside of the submount relative to an edge at which the upper face and the first lateral face intersect in a top view; and a second lateral face being located at the same side as the first lateral face and intersecting the lower face. A portion of a bonding material protrudes from the lower face and extends outward of an edge at which the lower face and the second lateral face intersect.

A light emitting device includes: at least one semiconductor laser element; a submount; and a base portion having a mounting surface. The submount includes: a first lateral face being located at a side of an exiting lateral surface of the semiconductor laser element, the first lateral face intersecting the upper face of the submount, and the first lateral face being above and separated from the mounting surface; a lower face being set back inside of the submount relative to an edge at which the upper face and the first lateral face intersect in a top view; and a second lateral face being located at the same side as the first lateral face and intersecting the lower face. A portion of a bonding material protrudes from the lower face and extends outward of an edge at which the lower face and the second lateral face intersect.

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.

A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.

A semiconductor optical device includes: a base configured to intersect with a first direction; a first protrusion configured to protrude from the base in the first direction, the first protrusion including a planar lightwave circuit including: a core layer; and a cladding layer surrounding the core layer; a second protrusion configured to protrude from the base in the first direction and arranged along the first protrusion in a second direction intersecting with the first direction, a height of the second protrusion from the base in the first direction being lower than a height of the first protrusion; an optical semiconductor element placed on a facet of the second protrusion in the first direction and optically connected to the core layer; and a marker provided on the second protrusion in a manner exposed on the facet, the marker being made of a same material as the core layer.

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

In a semiconductor laser drive device, wiring inductance between a semiconductor laser and a laser driver is reduced. A substrate has a laser driver built inside. A semiconductor laser is mounted on one surface of a substrate of the semiconductor laser drive device and emits irradiation light from an irradiation surface. A connection wiring electrically connects the laser driver and the semiconductor laser with a wiring inductance of 0.5 nH or less. A passive component is disposed to face a side of the semiconductor laser having the least number of pads and connects to the semiconductor laser and the laser driver.

In a semiconductor laser drive device, wiring inductance between a semiconductor laser and a laser driver is reduced. A substrate has a laser driver built inside. A semiconductor laser is mounted on one surface of a substrate of the semiconductor laser drive device and emits irradiation light from an irradiation surface. A connection wiring electrically connects the laser driver and the semiconductor laser with a wiring inductance of 0.5 nH or less. A passive component is disposed to face a side of the semiconductor laser having the least number of pads and connects to the semiconductor laser and the laser driver.

A three-dimensional optoelectronic device package is disclosed. The three-dimensional optoelectronic device package comprises a first board having at least one surface on which one or more optoelectronic devices is disposed, and a second board having at least one surface on which a plurality of optoelectronic devices is disposed. A side of the second board is attached to the surface of the first board on which one or more optoelectronic devices is disposed to form an angle between the surface of the first board on which one or more optoelectronic devices is disposed and the surface of the second board on which one or more optoelectronic devices is disposed. A method for manufacturing a three-dimensional optoelectronic device package is also disclosed.