An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

A laser device includes a gain medium including a facet. The laser device includes a metasurface including a plurality of supercells. The metasurface is disposed on a substrate and configured to reflect and focus a first portion of light from the facet back to the gain medium as a feedback beam. The metasurface can be configured to reflect a second portion of the light as an output beam at an angle that is nonzero relative to a direction of the feedback beam. The metasurface can be configured to transmit a second portion of the light as an output beam through the metasurface away from the facet. The emission wavelength of the laser device can be tuned by translating the metasurface. The output beam can be collimated towards a fixed direction while tuning the wavelength.

A nitride semiconductor laser element includes a nitride semiconductor stack body and a protective film. The nitride semiconductor stack body includes first and second nitride semiconductor layers and an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer. The nitride semiconductor stack body defines a light-emission-side end face intersecting a face of the active layer on a second nitride semiconductor layer side, and a light-reflection-side end face intersecting the face of the active layer on the second nitride semiconductor layer side. The protective film is disposed on the light-emission-side end face of the nitride semiconductor stack body. The protective film includes, in the order from the light-emission-side end face, a first film that is a crystalline film containing oxygen and aluminum and/or gallium, a second film that is a nitride crystalline film, and a third film containing aluminum and oxygen.

A vertical external-cavity surface-emitting laser (VECSEL) whose blueshift is reduced also in a high intensity range of emitted laser light is realized. A surface-emitting device for VECSEL includes a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on the base substrate. The emitter structure is formed of unit deposition parts, each of which is provided on the base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light. A c-axis orientation of each of the unit deposition parts conforms to the c-axis orientation of the base substrate located directly below the unit deposition parts. Grooves are formed between the unit deposition parts.

A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

A laser device includes a gain medium including a facet. The laser device includes a metasurface including a plurality of supercells. The metasurface is disposed on a substrate and configured to reflect and focus a first portion of light from the facet back to the gain medium as a feedback beam. The metasurface can be configured to reflect a second portion of the light as an output beam at an angle that is nonzero relative to a direction of the feedback beam. The metasurface can be configured to transmit a second portion of the light as an output beam through the metasurface away from the facet. The emission wavelength of the laser device can be tuned by translating the metasurface. The output beam can be collimated towards a fixed direction while tuning the wavelength.