Disclosed are a wavelength-selectable laser diode and an optical communication apparatus including the same. The wavelength-selectable laser diode includes a substrate, which includes a gain region, a tuning region spaced apart from the gain region, and a phase adjusting region between the tuning region and the gain region, a waveguide layer on the substrate, a clad layer on the waveguide layer, and gratings disposed on the substrate or the clad layer in the gain region and the tuning region.

A light-emitting device includes an optical amplifier and gives off output light from optical amplifier by making a plurality of seed light rays, having mutually different wavelengths, incident on optical amplifier. Optical amplifier includes a medium portion containing a wavelength-converting element. Optical amplifier has wavelength-converting element thereof excited by excitation light to produce a plurality of partially coherent light rays, of which wavelengths are respectively the same as the mutually different wavelengths of plurality of seed light rays, thereby giving off, as output light, a multi-wavelength light beam. Excitation light has a shorter wavelength than any of plurality of seed light rays and is incident on the medium portion. Multi-wavelength light beam includes a plurality of light rays amplified. Plurality of light rays amplified have wavelengths, which are respectively the same as mutually different wavelengths of plurality of seed light rays.

The invention provides a light generating device (1000) configured to generate device light (1001), wherein the light generating device (1000) comprises: a first light source (110) configured to generate one or more of UV and blue first light source light (111), wherein the first light source (110) is a first laser light source (10); a second light source (120) configured to generated green second light source light (121), wherein the second light source (120) is a second laser light source (20); a third light source (130) configured to generate red third light source light (131), wherein the third light source (130) is a third laser light source (30); a fourth light source (140) configured to generate blue fourth light source light (141), wherein the fourth light source (140) is a fourth laser light source (40); a first luminescent material (210) configured to convert at least part of the first light source light (111) into first luminescent material light (211) having an emission band having wavelengths in one or more of (a) the green spectral wavelength range and (b) the yellow spectral wavelength range, wherein the first luminescent material (210) comprises a luminescent material of the type A3B5O12:Ce, wherein A comprises one or more of Y, La, Gd, Tb and Lu, and wherein B comprises one or more of Al, Ga, In and Sc; an optical element (430) configured to combine (i) optionally unconverted first light source light (111), (ii) the second light source light (121), (iii) the third light source light (131), (iv) the fourth light source light (141), and (v) the first luminescent material light (211), to provide device light (1001), wherein the light generating device (1000) is configured to provide in an operational mode white device light (1001) comprising at least the luminescent material light (211) and the fourth light source light (141); and a control system (300) configured to control one or more of the light sources (110, 120, 130, 140).

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an α-SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370° C. or more and 1,600° C. or less to obtain a first sintered body.

A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

A light emitting device includes: a light emitting element; and a wavelength conversion member including: a wavelength conversion part configured to convert light emitted from the light emitting element into light having a different wavelength and to output the light having the different wavelength, an enclosing part enclosing the wavelength conversion part, and a conducting layer disposed on the enclosing part and surrounding the wavelength conversion part. The conducting layer comprises ruthenium oxide.

Provided is a sintered body that has high heat dissipation and from which light can be emitted when excited by an excitation light source, a light emitting device, a wavelength conversion member, and a method for manufacturing the sintered body.

The sintered body includes aluminum nitride and europium, has a thermal diffusivity of 27.0 mm.sup.2/s or greater as measured by a laser flash method at 25° C., and emits green light when excited by an excitation light source.

A wavelength conversion device and a light source system, including: a substrate; a first light-emitting portion disposed on the substrate, wherein the first light-emitting portion includes a first light guide area and a counterweight area provided on the same layer as the first light guide area, the first light guide area being used for guiding first light, and the counterweight area being used for making the weight distribution of the wavelength conversion device substantially uniform; and a second light-emitting portion provided on the substrate on the same side as the first light-emitting portion, the second light-emitting portion including a conversion area, and the conversion area being used to convert at least a part of excitation light into excited light for emission when the excitation light is received.

A multilayer wiring substrate includes a first wiring substrate including a plurality of stacked layers made of a thermo setting resin and having a wiring layer formed between each adjacent layer of the layers in a state in contact with the adjacent layers, a second wiring substrate made of a ceramic, and a joining layer disposed between a back surface of the first wiring substrate and a front surface of the second wiring substrate and configured to join the first wiring substrate and the second wiring substrate to each other, wherein at least a surface of the joining layer adjacent to the second wiring substrate is made of a thermo plastic resin.

The invention relates to an optoelectronic component, comprising at least one semiconductor emitter having an active region designed for emitting electromagnetic radiation of a first wavelength range. The optoelectronic component also comprises at least one wavelength conversion plate, having a decoupling surface and a lateral surface arranged laterally to same and orientated transverse to same, as well as a substrate on which the semiconductor emitter and the wavelength conversion plate are arranged. The decoupling surface is facing away from the substrate. The semiconductor emitter is designed to irradiate the wavelength conversion plate with electromagnetic radiation on the lateral surface. The wavelength conversion plate is designed to emit a mixed radiation out of the decoupling surface, said mixed radiation comprising at least one portion of the radiation of the first wavelength range and a converted radiation of a second wavelength range.