H01S5/0625

Semiconductor laser

A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency.

Integrated laser source

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

TRANSIENT WAVELENGTH DRIFT REDUCTION IN SEMICONDUCTOR LASERS

This application relates to a laser assembly displaying self-heating mitigation. The laser assembly comprises a semiconductor laser and a drive unit for driving the semiconductor laser. The semiconductor laser includes a first semiconductor region for generating or modulating an optical signal in response to a first drive current that is applied to the first semiconductor region, and a heating region that is arranged in proximity to the first semiconductor region and electrically insulated from the first semiconductor region. The drive unit is configured to generate the first drive current and a second drive current, apply the first drive current to the first semiconductor region during respective transmission periods of the semiconductor laser, and apply the second drive current to the heating region in intervals between successive transmission periods.

Thermally tunable laser and method for fabricating such laser

A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

SEMICONDUCTOR RING LASER, PHOTONIC INTEGRATED CIRCUIT AND OPTO-ELECTRONIC SYSTEM COMPRISING THE SAME
20220385035 · 2022-12-01 ·

A semiconductor ring laser including a closed loop laser cavity and an optical gain device that is optically interconnected with the closed loop laser cavity. The optical gain device includes a first optical gain segment and a second optical gain segment. The first optical gain segment and the second optical gain segment being non-identical, optically interconnected with each other, and electrically isolated from each other. A PIC including a semiconductor ring laser and to an opto-electronic system that includes a PIC. The opto-electronic system can be one of a transmitter, a receiver, a transceiver, a coherent transmitter, a coherent receiver and a coherent transceiver. The opto-electronic system can for example, but not exclusively, be used for telecommunication applications, LIDAR or sensor applications.

Semiconductor laser drive circuit, method for driving semiconductor laser drive circuit, distance measuring apparatus, and electronic apparatus
11594855 · 2023-02-28 · ·

A semiconductor laser drive circuit includes: an anode electrode divided into at least one gain region and at least one light absorption region; a cathode electrode shared between the gain region and the light absorption region; and a resistance connected to the anode electrode of the light absorption region.

Wavelength drift suppression for burst-mode tunable EML transmitter

A method (900) includes delivering a first bias current (I.sub.GAIN) to an anode of gain-section diode (590a) and delivering a second bias current (I.sub.PH) to an anode of a phase-section diode (590b). The method also includes receiving a burst mode signal (514) indicative of a burst-on state or a burst-on state, and sinking a first sink current (I.sub.SINK) away from the first bias current when the burst mode signal is indicative of the burst-off state. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method also includes sinking a second sink current away from the second bias current at the anode of the phase-section diode and ceasing the sinking of the first sink current away from the first bias current at the anode of the gain section diode.

Wavelength drift suppression for burst-mode tunable EML transmitter

A method (900) includes delivering a first bias current (I.sub.GAIN) to an anode of gain-section diode (590a) and delivering a second bias current (I.sub.PH) to an anode of a phase-section diode (590b). The method also includes receiving a burst mode signal (514) indicative of a burst-on state or a burst-on state, and sinking a first sink current (I.sub.SINK) away from the first bias current when the burst mode signal is indicative of the burst-off state. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method also includes sinking a second sink current away from the second bias current at the anode of the phase-section diode and ceasing the sinking of the first sink current away from the first bias current at the anode of the gain section diode.

LASER HAVING REDUCED COHERENCE VIA PHASER SHIFTER

A laser device includes a laser and a controller. The laser has an optical cavity that includes an active gain section and a phase shifter. The controller is configured to excite the active gain section to lase light out of the optical cavity. The controller is further configured to, while the light is being lased out of the optical cavity, modulate a refractive index of the phase shifter to shift an optical phase of lasing modes of the lased light to thereby reduce coherence of the lased light.

LASER HAVING REDUCED COHERENCE VIA PHASER SHIFTER

A laser device includes a laser and a controller. The laser has an optical cavity that includes an active gain section and a phase shifter. The controller is configured to excite the active gain section to lase light out of the optical cavity. The controller is further configured to, while the light is being lased out of the optical cavity, modulate a refractive index of the phase shifter to shift an optical phase of lasing modes of the lased light to thereby reduce coherence of the lased light.