Patent classifications
H01S5/1243
Semiconductor Optical Device
A semiconductor optical device includes a light emitting layer that emits light in a state of current injection; an optical waveguide in which a width or a thickness in an extending direction (y) of the light emitting layer varies along the extending direction; and a uniform diffraction grating having constant cycle, width and depth, wherein the light emitting layer, the optical waveguide and the uniform diffraction grating are arranged at positions where the light emitting layer, the optical waveguide, and the uniform diffraction grating are optically coupled to one another, the uniform diffraction grating is arranged above the light emitting layer, the optical waveguide is arranged below the light emitting layer, and the optical waveguide includes, in the extending direction, a first portion having a predetermined width, a second portion having a larger width than the width of the first portion, and a third portion having the same width as the width of the first portion.
Tunable semiconductor laser device
A laser device includes front and back DBRs and an interferometer. The front DBR is coupled to a front DBR electrode. The front DBR forms a first tunable multi-peak lasing filter. The back DBR is coupled to a back DBR electrode. The back DBR forms a second tunable multi-peak lasing filter. The interferometer part is coupled between the front DBR and the back DBR. The interferometer part includes first and second waveguide combiners and first and second interferometer waveguides coupled therebetween. The first waveguide combiner couples the interferometer part to the back DBR. The second waveguide combiner couples the interferometer part to the front DBR. The first interferometer waveguide is coupled to an interferometer electrode. The interferometer forms a third tunable multi-peak lasing filter.
Tapered-grating single mode lasers and method of manufacturing
Single-mode distributed-feedback (DFB) lasers including single mode DFB waveguides with tapered grating structures are provided herein. Tapered grating structures provide for single mode DFB waveguides with predictable single mode operation. Uniform grating structures may provide for single mode operation, however DFB waveguides implementing uniform grating structures may operate at one of two single modes. Advantageously, DFB waveguides with tapered gratings operate with a spectrally narrow single mode at the same predictable single mode for all DFB waveguides with substantially identical specifications. Such predictability may lead to increased yield during manufacture of DFB waveguides with tapered gratings.
TUNABLE SEMICONDUCTOR LASER DEVICE
A laser device includes front and back DBRs and an interferometer. The front DBR is coupled to a front DBR electrode. The front DBR forms a first tunable multi-peak lasing filter. The back DBR is coupled to a back DBR electrode. The back DBR forms a second tunable multi-peak lasing filter. The interferometer part is coupled between the front DBR and the back DBR. The interferometer part includes first and second waveguide combiners and first and second interferometer waveguides coupled therebetween. The first waveguide combiner couples the interferometer part to the back DBR. The second waveguide combiner couples the interferometer part to the front DBR. The first interferometer waveguide is coupled to an interferometer electrode. The interferometer forms a third tunable multi-peak lasing filter.
Tapered-Grating Single Mode Lasers and Method of Manufacturing
Single-mode distributed-feedback (DFB) lasers including single mode DFB waveguides with tapered grating structures are provided herein. Tapered grating structures provide for single mode DFB waveguides with predictable single mode operation. Uniform grating structures may provide for single mode operation, however DFB waveguides implementing uniform grating structures may operate at one of two single modes. Advantageously, DFB waveguides with tapered gratings operate with a spectrally narrow single mode at the same predictable single mode for all DFB waveguides with substantially identical specifications. Such predictability may lead to increased yield during manufacture of DFB waveguides with tapered gratings.
TUNABLE SEMICONDUCTOR LASER DEVICE
A laser device includes front and back DBRs and an interferometer. The front DBR is coupled to a front DBR electrode. The front DBR forms a first tunable multi-peak lasing filter. The back DBR is coupled to a back DBR electrode. The back DBR forms a second tunable multi-peak lasing filter. The interferometer part is coupled between the front DBR and the back DBR. The interferometer part includes first and second waveguide combiners and first and second interferometer waveguides coupled therebetween. The first waveguide combiner couples the interferometer part to the back DBR. The second waveguide combiner couples the interferometer part to the front DBR. The first interferometer waveguide is coupled to an interferometer electrode. The interferometer forms a third tunable multi-peak lasing filter.
Bloch mirror resonator and distributed feedback laser using same
A resonator is provided having a waveguide with a first boundary, a second boundary parallel to the first boundary, a first end, a second end, and a waveguide cavity at least partly between the first boundary and the second boundary. A first grating, having a period of distance a, is at the first boundary of the waveguide, and a second grating, having a period of distance a, is at the second boundary of the waveguide. The first and second boundaries are separated by a constant distance d. The first boundary may have a periodic profile aligned with a periodic profile of the second boundary. The periodic profile of the first boundary and the second boundary may be a sinusoidal profile, a square profile, or profile of another shape. The resonator may be suitable for use in a distributed feedback laser.
BLOCH MIRROR RESONATOR AND DISTRIBUTED FEEDBACK LASER USING SAME
A resonator is provided having a waveguide with a first boundary, a second boundary parallel to the first boundary, a first end, a second end, and a waveguide cavity at least partly between the first boundary and the second boundary. A first grating, having a period of distance a, is at the first boundary of the waveguide, and a second grating, having a period of distance a, is at the second boundary of the waveguide. The first and second boundaries are separated by a constant distance d. The first boundary may have a periodic profile aligned with a periodic profile of the second boundary. The periodic profile of the first boundary and the second boundary may be a sinusoidal profile, a square profile, or profile of another shape. The resonator may be suitable for use in a distributed feedback laser.
Wavelength Tunable Laser
A wavelength-tunable laser a circling waveguide having a circling structure; a first coupled waveguide coupled to the circling waveguide in one region; and a second coupled waveguide coupled to the circling waveguide in another region, wherein a first reflection region is connected in the light guiding direction of the first coupled waveguide, an active region and a second reflection region are sequentially connected in the light guiding direction of the second coupled waveguide, and the refractive index of at least part of the circling waveguide is modulated.
LASER CHIP WITH MULTIPLE OUTPUTS ON COMMON SIDE
A laser chip including a laser cavity that produces multiple laser outputs. A laser waveguide guides light through the laser cavity and has multiple output facets. Each of the laser outputs passes through one of the output facets. The laser waveguide guides the laser outputs such that the angle between the exit direction of different laser outputs is less than 180. The exit direction for a laser output is the direction of propagation of light in the laser waveguide at one of the output facets.