A light emitting device according to an embodiment of the present disclosure includes: a substrate; a first contact layer; a buffer layer in which at least any of a carrier concentration, a material composition, and a composition ratio is different from that of the first contact layer; and a semiconductor stacked body. The substrate has a first surface and a second surface that are opposed to each other. The first contact layer is stacked on the first surface of the substrate. The buffer layer is stacked on the first contact layer. The semiconductor stacked body is stacked above the first surface of the substrate with the first contact layer and the buffer layer interposed in between. The semiconductor stacked body has a light emitting region configured to emit laser light.

A multi-wavelength light-emitting semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a first reflector on the substrate, a light emission layer on the first reflector, second reflectors on corresponding active regions; and apertures on corresponding active regions. The light emission layer includes active regions. Each of the active regions includes a primary emission wavelength different from each other.

A vertical cavity surface emitting laser (VCSEL) may include an active region (e.g., one or more quantum wells) and a chirped pattern reflector. The active region may be configured to be electrically pumped such that the active region generates light having a fundamental mode and a higher order mode. The chirped pattern reflector may include a first portion presenting to the active region as a first portion of an effective mirror having a concave shape and a second portion presenting to the active region as a second portion of the effective mirror having a convex shape.

[Object] To provide a vertical cavity surface emitting laser element that has low thermal resistance and is capable of operating at high temperature, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element (100) according to the present technology includes: a first substrate (110); a second substrate (120); a first DBR layer (131); and a second DBR layer (132). The first substrate (110) is formed of a first material and includes an active layer (115). The second substrate (120) is formed of a second material and is bonded to the first substrate (110), the second material causing light having a specific wavelength to be transmitted therethrough and being different from that of the first substrate (110). The first DBR layer (131) is provided on a side of the first substrate (110) opposite to the second substrate (120) and reflects the light having the wavelength. The second DBR layer (132) is provided on a side of the second substrate (120) opposite to the first substrate (110) and reflects the light having the wavelength.

A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

A method of forming an optical aperture of a vertical cavity surface emitting laser includes the steps of providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer comprising a semiconductor material suitable to be oxidized and oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer. The method also includes removing at least a part of the oxidized outer region so as to form a gap where the oxidized outer region or the part of the oxidized outer region has been removed, depositing an electrically non-conducting material on walls of the gap with a thickness smaller than a thickness of the gap, and filling a remaining void of the gap with a further material.

A laser light source may include an arrangement of surface-emitting semiconductor lasers to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser which emits radiation that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation. The emission frequency of the first semiconductor laser can be changed by changing the operating current.

In some implementations, an optical device includes a two-zone vertical cavity surface emitting laser (VCSEL) with a set of emission zones configured to emit structured light forming a set of dots; a single-element collimating lens aligned to the two-zone VCSEL; and a tiling diffractive optical element (DOE) aligned to the single-element collimating lens, wherein the tiling DOE comprises a set of tile segments aligned to the set of emission zones, and wherein a tile segment, of the set of tile segments, is configured to project, from the set of emission zones toward portions of a target, the structured light forming the set of dots.

A multi junction vertical cavity surface emitting laser (VCSEL) may comprise a substrate, a top contact, and a stack comprising a set of layers formed between the substrate and the top contact. In some implementations, the set of layers formed between the substrate and the top contact may comprise a cavity comprising a first active region, a second active region, and a tunnel junction connecting the first active region and the second active region, a first distributed Bragg reflector (DBR) pair comprising a high-contrast p-type DBR (p-DBR) and a low-contrast p-DBR between the cavity and the top contact, and a second DBR pair comprising a high-contrast n-type DBR (n-DBR) and a low-contrast n-DBR between the cavity and the substrate. The low-contrast p-DBR and the low-contrast n-DBR are located on an inner side of the stack, and the high-contrast p-DBR and the high-contrast n-DBR are located on an outer side of the stack.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.