A light emitting device according to an embodiment of the present disclosure includes: a substrate; a first contact layer; a buffer layer in which at least any of a carrier concentration, a material composition, and a composition ratio is different from that of the first contact layer; and a semiconductor stacked body. The substrate has a first surface and a second surface that are opposed to each other. The first contact layer is stacked on the first surface of the substrate. The buffer layer is stacked on the first contact layer. The semiconductor stacked body is stacked above the first surface of the substrate with the first contact layer and the buffer layer interposed in between. The semiconductor stacked body has a light emitting region configured to emit laser light.

A vertical cavity light-emitting element includes a substrate, a first multilayer reflector, a semiconductor structure layer, an electrode layer, and a second multilayer reflector. The semiconductor structure layer includes a first semiconductor layer of a first conductivity type on the first multilayer reflector, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer of a second conductivity type on the light-emitting layer. The electrode layer is on an upper surface of the semiconductor structure layer and is electrically in contact with the second semiconductor layer in one region of the upper surface. The second multilayer reflector covers the one region on the electrode layer and constitutes a resonator with the first multilayer reflector. The semiconductor structure layer has one recessed structure including one or a plurality of recessed portions passing through the light-emitting from the upper surface in a region surrounding the one region.

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

A vertical cavity surface emitting laser includes a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The first distributed Bragg reflector, the active layer and the second distributed Bragg reflector are arranged in sequence in the direction of a first axis. The second distributed Bragg reflector includes a semiconductor region and a high resistance region. The high resistance region has an electrical resistance higher than the electrical resistance of the semiconductor region. The first axis passes through the semiconductor region. The high resistance region surrounds the semiconductor region. In a cross section including the first axis, the high resistance region has an inner edge extending in a direction inclined with respect to the first axis such that an inner diameter of the high resistance region increases as a distance from the active layer increases in the direction of the first axis.

A surface-emitting semiconductor light-emitting device includes a first semiconductor layers, an active layer on the first semiconductor layer, a photonic crystal layer on the active layer and a second semiconductor layer on the photonic crystal layer. The photonic crystal layer include first protrusions in a first region and second protrusions in a second region. A spacing of adjacent first protrusions is greater than a spacing of adjacent second protrusions. The second semiconductor layer includes a first layer and a second layer on the first layer. The first layer covers first and second protrusions so that a first space remains between the adjacent first protrusions. The first layer includes a first portion provided between the adjacent second protrusions. The second layer includes a second portion provided between the adjacent first protrusions. The first space between the adjacent first protrusions is filled with the second portion of the second layer.

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

A Vertical Cavity Surface Emitting Laser VCSEL, includes an optical resonator with a first reflector, a second reflector, and an active region for laser emission arranged between the first reflector and the second reflector and remaining regions outside of the active region, and an electrical contact arrangement configured to provide an electrical drive current to electrically pump the optical resonator. The optical resonator further comprises a loss layer introducing optical and/or electrical losses to increase wavelength shift of the laser emission when varying the drive current. If the loss layer is an optical loss layer, the optical losses introduced by the loss layer are higher than the sum of the optical losses in the remaining regions. If the loss layer is an electrical loss layer, the electrical losses introduced by the loss layer are higher by a factor of at least 5 than the electrical losses in the remaining regions.

A semiconductor light-emitting element having a structure in which a substrate, a first reflector, a resonator cavity including an active layer, a second reflector and a transparent conductive film are stacked in this sequence, the semiconductor light-emitting element comprising: a first current constriction portion configured with an oxidation constriction layer; and a second current constriction portion configured with an insulation film, which is formed on an upper face of the second reflector and has an opening, and a contact portion between the transparent conductive film and a semiconductor layer with which the transparent conductive film is in contact, wherein a width d2 of the second current constriction portion is smaller than a width d1 of the first current constriction portion.