A semiconductor optical amplifier includes: a light source part that is formed on a substrate, the substrate including a substrate surface; and an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area.

A vertical cavity surface emitting laser includes a substrate that has a main surface including a first area and a second area, a post that is provided on or above the first area, and that includes a first-conductive first distributed Bragg reflector provided on or above the first area, an active layer provided on the first distributed Bragg reflector, and a second-conductive second distributed Bragg reflector provided on the active layer, a stack that is provided on or above the main surface, and that includes an upper surface having at least one recess portion disposed above the second area, a resin portion that is disposed in the at least one recess portion, and an electrode pad that is provided on the resin portion and that is electrically connected to either one of the first distributed Bragg reflector and the second distributed Bragg reflector.

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure includes a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The second reflector has an opening extending from a second surface of the second reflector into the second reflector by a predetermined depth. Etching into the second reflector to the predetermined depth reduces the photon lifetime and the threshold gain of the VCSEL, while increasing the modulation bandwidth and maintaining the high reflectivity of the second reflector. Thus, etching the second reflector to the predetermined depth provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot.

A method for removing devices from a substrate using a supporting plate. One or more bars comprised of semiconductor layers are formed on a substrate, and one or more device structures are formed on the bars. At least one supporting plate is bonded to the bars, and stress is applied to the supporting plate to remove the bars from the substrate. The supporting plate is used to divide the bars into one or more device units after the bars are removed from the substrate, wherein the device units are packaged and arranged into one or more modules. The supporting plate may also be used to make a cleavage facet for one or more of the device structures after the bars are removed from the substrate.

An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

A structure of Vertical Cavity Surface-Emitting Laser (VCSEL) comprises an ion-implanted region with gas-furnace configuration arranged in the second mirror layer around a laser light output window, in order to retain several conductive passages between the inner and outer rims of the ion-implanted region, so as to let the aperture of the inner rim of the metal layer (that is, the aperture of the output window) be expanded without loss of resistance. Not only the shading effect can be removed, the spectrum width suppression function can be preserved, but also various photoelectric characteristics such as transmission eye diagram and photoelectric curve linearity can be improved, in addition, high-speed transmission characteristics can also be optimized.

A surface emitting laser includes a substrate, a lower contact layer disposed on the substrate, a semiconductor layer mesa including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer which are laminated, in the order named, on the lower contact layer, an annular electrode disposed on the upper contact layer, and a light transmitting window situated inside the annular electrode to transmit laser light, wherein the upper reflector layer includes a first region and a second region, the first region being inclusive of an area situated directly below the electrode and the light transmitting window, the second region being inclusive of an area outside the mesa and inclusive of a surrounding area of the first region within the mesa, and wherein a proton concentration in the first region is lower than a proton concentration in the second region.

A surface emitting laser device includes: a first semiconductor layer of a first conductive type; a second semiconductor layer including a first light reflecting layer of the first conductive type, a light generating layer, and a second light reflecting layer of a second conductive type, which are laminated in this order from a first semiconductor layer side; a laser diode structure partitioned in a plateau shape including a top surface by a removal portion in which the second semiconductor layer is dug down, and configured to emit a laser beam to the first semiconductor layer side; a first insulating layer formed inside the laser diode structure; and a second insulating layer covering the top surface.