A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A vertical cavity surface emitting laser (VCSEL) may include an active region (e.g., one or more quantum wells) and a chirped pattern reflector. The active region may be configured to be electrically pumped such that the active region generates light having a fundamental mode and a higher order mode. The chirped pattern reflector may include a first portion presenting to the active region as a first portion of an effective mirror having a concave shape and a second portion presenting to the active region as a second portion of the effective mirror having a convex shape.

Provided is a variable-wavelength surface emission laser having a wide wavelength variation range. A partial region of a thin-plate substrate (22) and a movable mirror (20), the partial region being positioned between an air gap (G1) and a movable gap (G2), can move toward the air gap (G1) side or the movable gap (G2) side.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on the transparent electrode in the recess of the p-electrode.

The present disclosure relates to methods and apparatuses for improving tolerances of in-plane optical alignment of optical interconnects. An example method includes depositing a first reflector with a first spectral reflectivity on an end of an optical fiber, coupling a laser to another end of the optical fiber, changing a spectral reflectivity of a region of the first reflector adjacent to the end of a core of the optical fiber from the first spectral reflectivity by exposure to the laser, resulting in a first reflector with multiple regions of spectral reflectivity, and coupling the first reflector to an integrated unit comprising an optical cavity deposited on a second reflector.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.

A method for producing an integrated micromechanical fluid sensor component includes forming a first wafer with a first Bragg reflector and with a light-emitting device on a first substrate. The light-emitting device is configured to emit light rays in an emission direction from a surface of the light-emitting device facing away from the first Bragg reflector. The method further includes forming a second wafer with a second Bragg reflector and with a photodiode on a second substrate. The photodiode is arranged on a surface of the second Bragg reflector facing towards the second substrate. The method also includes bonding or gluing the first wafer to the second wafer such that there is formed a cavity into which a fluid is introduced and through which the light rays can pass. The method further includes separating the fluid sensor component from the first and the second wafer.

A grating reflector. The grating reflector includes a mesh structure defining a mesh plane and having a thickness normal thereto. The mesh structure includes parallel bars and parallel crossbars, which extend along a direction orthogonal to the bars. The bars and crossbars define a 2D grid of elongated holes, each extending through the mesh structure perpendicular to the mesh plane. The holes are elongated along a direction parallel to the bars and have a substantially rectangular shape with rounded corners. The 2D grid is defined by a cross-shaped unit cell having a bar section and an intersecting crossbar section. The grating reflector has a reflectivity in a bandwidth around a center wavelength higher than 0.99. A ratio between the unit cell volume and the center wavelength in the mesh material cubed is between 1.35 and 1.55.