A semiconductor arrangement and a method of forming the same are described. A semiconductor arrangement includes a first layer including a first optical transceiver and a second layer including a second optical transceiver. A first serializer/deserializer (SerDes) is connected to the first optical transceiver and a second SerDes is connected to the second optical transceiver. The SerDes converts parallel data input into serial data output including a clock signal that the first transceiver transmits to the second transceiver. The semiconductor arrangement has a lower area penalty than traditional intra-layer communication arrangements that do not use optics for alignment, and mitigates alignment issues associated with conventional techniques.

A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (T.sub.epi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (T.sub.amb) and the epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m.sup.2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.

The disclosure provides a nanolaser based on a depth-subwavelength graphene-dielectric hyperbolic dispersive cavity, comprising a pumping light source and the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity; wherein the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity is a spherical or hemispherical hyperbolic dispersive microcavity formed by alternately wrapping a dielectric core with graphene layers and dielectric layers. Because the graphene plasmon has unique excellent performances, such as an electrical adjustability, a low intrinsic loss, a high optical field localization, and a continuously adjustable resonance frequency from mid-infrared to terahertz, compared with a common metal-dielectric hyperbolic dispersive characteristic, a graphene-dielectric hyperbolic dispersive metamaterial used by the disclosure not only may highly localize an energy of an electromagnetic wave in a more depth-subwavelength cavity, but also may reduce an ohmic loss and improve a quality factor.

A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

An optoelectronic device including a semiconductor layer formed from a central segment and at least two lateral segments forming tensioning arms that extend along a longitudinal axis A1. The semiconductor layer furthermore includes at least two lateral segments forming electrical biasing arms that extend along a transverse axis A2 orthogonal to the axis A1.

The disclosure provides a nanolaser based on a depth-subwavelength graphene-dielectric hyperbolic dispersive cavity, comprising a pumping light source and the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity; wherein the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity is a spherical or hemispherical hyperbolic dispersive microcavity formed by alternately wrapping a dielectric core with graphene layers and dielectric layers. Because the graphene plasmon has unique excellent performances, such as an electrical adjustability, a low intrinsic loss, a high optical field localization, and a continuously adjustable resonance frequency from mid-infrared to terahertz, compared with a common metal-dielectric hyperbolic dispersive characteristic, a graphene-dielectric hyperbolic dispersive metamaterial used by the disclosure not only may highly localize an energy of an electromagnetic wave in a more depth-subwavelength cavity, but also may reduce an ohmic loss and improve a quality factor.

A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

A structure having first and second layers is disposed on a substrate. The second layer is disposed on the first layer, is compressively strained, and comprises the alloy including germanium and tin. The structure comprises first and second members spaced a distance from each other along a direction, a strip located between the first and second members and extending along an axis intersecting the direction, and arms connecting the first and second members to a first end of the strip. The first and second members, the strip and the arms comprise respective portions of the first and second layers. A portion of the first layer at the strip and arms is removed such that the strip and arms become suspended and the arms remain anchored to the first layer via the first and second members. Tensile strain is induced in the alloy via the arms. The alloy may perform lasing.

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.