A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap,

[00001]$E_F-E_V<\frac{E_G}{2}$

applying to the layer (A) and

[00002]$E_L-E_F<\frac{E_G}{2}$

applying to the layer (B), with E.sub.F the energy position of the Fermi level, E.sub.V the energy position of the valence band, E.sub.L the energy position of a conduction band and E.sub.L−E.sub.V the energy difference of the semiconductor band gap E.sub.G, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.

A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, $E_F-E_V<\frac{E_G}{2}$
applying to the layer (A) and $E_L-E_F<\frac{E_G}{2}$
applying to the layer (B), with E.sub.F the energy position of the Fermi level, E.sub.V the energy position of the valence band, E.sub.L the energy position of a conduction band and E.sub.L−E.sub.V the energy difference of the semiconductor band gap E.sub.G, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.

A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap,

[00001]$E_F-E_V<\frac{E_G}{2}$

applying to the layer (A) and

[00002]$E_L-E_F<\frac{E_G}{2}$

applying to the layer (B), with E.sub.F the energy position of the Fermi level, E.sub.V the energy position of the valence band, E.sub.L the energy position of a conduction band and E.sub.L−E.sub.V the energy difference of the semiconductor band gap E.sub.G, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.

A semiconductor light-emitting device includes a layer structure of a nitride semiconductor, and the layer structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an intermediate layer. The intermediate layer includes an active layer and is provided between the n-type semiconductor layer and the p-type semiconductor layer. The layer structure includes a residual donor in a region at least included in the intermediate layer, the region being situated between the active layer and the p-type semiconductor layer. The intermediate layer includes impurities in the region between the active layer and the p-type semiconductor layer, the impurities compensating the residual donor. Further, the intermediate layer is configured such that a concentration of the impurities in the region between the active layer and the p-type semiconductor layer is higher than a concentration of the impurities in the p-type semiconductor layer.

A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, $E_F-E_V<\frac{E_G}{2}$
applying to the layer (A) and $E_L-E_F<\frac{E_G}{2}$
applying to the layer (B), with E.sub.F the energy position of the Fermi level, E.sub.V the energy position of the valence band, E.sub.L the energy position of a conduction band and E.sub.LE.sub.V the energy difference of the semiconductor band gap E.sub.G, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.