A method for manufacturing a light emitting element according to the present disclosure is a method for manufacturing a light emitting element which includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, a first light reflecting layer 41, and a second light reflecting layer 42 having a flat shape, and in which a base surface 90 positioned on a first surface side of the first compound semiconductor layer 21 has a protrusion 91 protruding in a direction away from the active layer 23, and a cross-sectional shape of the protrusion 91 includes a smooth curve, the method including: forming a first sacrificial layer 81 on the base surface on which the protrusion 91 is to be formed; forming a second sacrificial layer 82 on the entire surface; and performing etching back from the base surface 91 inward by using the second sacrificial layer 82 and the first sacrificial layer 81 as etching masks.

A vertical cavity light-emitting element includes a substrate, a first multilayer reflector, a semiconductor structure layer, an electrode layer, and a second multilayer reflector. The semiconductor structure layer includes a first semiconductor layer of a first conductivity type on the first multilayer reflector, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer of a second conductivity type on the light-emitting layer. The electrode layer is on an upper surface of the semiconductor structure layer and is electrically in contact with the second semiconductor layer in one region of the upper surface. The second multilayer reflector covers the one region on the electrode layer and constitutes a resonator with the first multilayer reflector. The semiconductor structure layer has one recessed structure including one or a plurality of recessed portions passing through the light-emitting from the upper surface in a region surrounding the one region.

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.