To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge on a surface of the ridge on which the transparent conductive layer is formed, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

A semiconductor device according to the present technology includes a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is 0.99-1.0 times a first width, a third width is 0.96-1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of 90% to 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge on a surface of the ridge on which the transparent conductive layer is formed, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

A semiconductor light-emitting device according to an embodiment of the present disclosure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of well layers. In the plurality of well layers included in the active layer, a band gap inclination angle 1 of a second well layer located relatively close to the p-type semiconductor layer is smaller than a band gap inclination angle 2 of a first well layer located relatively close to the n-type semiconductor layer.

[Object] To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge on a surface of the ridge on which the transparent conductive layer is formed, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value x.sub.pi1 of proportion of tin less than x.sub.ps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin x.sub.ps1, and vertical structures having an average value x.sub.ps2 of proportion of tin greater than x.sub.ps1, thus forming regions for emitting or for receiving infrared radiation.

A semiconductor light-emitting device according to an embodiment of the present disclosure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of well layers. In the plurality of well layers included in the active layer, a band gap inclination angle 1 of a second well layer located relatively close to the p-type semiconductor layer is smaller than a band gap inclination angle 2 of a first well layer located relatively close to the n-type semiconductor layer.

A semiconductor optical element includes a first indirect bandgap semiconductor part that includes a first-conductivity-type impurity; a second indirect bandgap semiconductor part that includes a first-conductivity-type impurity; a third indirect bandgap semiconductor part that includes a second-conductivity-type impurity; a fourth indirect bandgap semiconductor part that includes a second-conductivity-type impurity; and a fifth indirect bandgap semiconductor part that includes a second-conductivity-type impurity. The first indirect bandgap semiconductor part has one or more first recesses. The one or more first recesses contain a medium having a refractive index lower than a refractive index of the second indirect bandgap semiconductor part. The fifth indirect bandgap semiconductor part has one or more second recesses. The one or more second recesses contain a medium having a refractive index lower than a refractive index of the fourth indirect bandgap semiconductor part.

A nitride semiconductor light-emitting element emits light and includes an N-type cladding layer, an N-side optical guide layer, an active layer, an electron blocking layer, a P-type interlayer, a P-side optical guide layer, and a P-type cladding layer. Average band gap energy of the electron blocking layer is higher than average band gap energy of the P-type cladding layer. Average band gap energy of the P-type interlayer is higher than average band gap energy of the P-side optical guide layer, and is smaller than the average band gap energy of the electron blocking layer. An average impurity concentration of the P-type interlayer is lower than an average impurity concentration of the electron blocking layer, and is higher than an average impurity concentration of the P-side optical guide layer. A peak wavelength of the light is less than 400 nm.