Disclosed is an epitaxial substrate with a 2D material interposer on a surface of a polycrystalline substrate. The ultra-thin 2D material interposer is grown by van der Waals epitaxy. The lattice constant of a surface layer of the ultra-thin 2D material interposer and the coefficient of thermal expansion of the substrate base are highly fit with those of AlGaN or GaN. The ultra-thin 2D material interposer is of a single-layer structure or a composite-layer structure. An AlGaN or GaN single crystalline epitaxial layer is grown on the ultra-thin 2D material interposer by virtue of the van der Waals epitaxy. Therefore, the large-size substrate may be manufactured with far lower costs than related single crystal wafers.

III-Nitride layers having spatially controlled regions or domains of porosities therein with tunable optical, electrical, and thermal properties are described herein. Also disclosed are methods for preparing and using such III-nitride layers.

A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

A method for enhancement of spontaneous Raman scattering (SRS) from gases comprising a multimode blue laser diode which receives feedback from a near concentric bidirectional multipass cavity in such a way as to generate a circulating power of order 100 W for a sample volume of 10 mm.sup.3. The feedback, provided via a volume Bragg grating, reduces the laser bandwidth to 4 cm.sup.−1. Spectra of spontaneous Raman scattering from ambient atmospheric air, detected collinearly with the pump, were recorded with a limit of detection below 1 part-per-million.

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

The present disclosure provides an apparatus for generating fiber delivered laser-induced white light. The apparatus includes a package case enclosing a board member with an electrical connector through a cover member and a laser module configured to the board member inside the package case. The laser module comprises a support member, at least one laser diode device configured to emit a laser light of a first wavelength, a set of optics to guide the laser light towards an output port. Additionally, the apparatus includes a fiber assembly configured to receive the laser light from the output port for further delivering to a light head member disposed in a remote destination. A phosphor material disposed in the light head member receives the laser light exited from the fiber assembly to induce a phosphor emission of a second wavelength for producing a white light emission substantially reflected therefrom for various applications.

An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface, and at least one functional film selected from a group consisting of a short pass filter, a long pass filter, and a heat dissipation member and disposed on a surface of the second light-transmissive member.

A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

A light emitting device includes a base, a lid portion, a plurality of semiconductor laser elements, and a collimate lens. The lid portion is fixed to the base to define a hermetically sealed space by the lid portion and the base. The semiconductor laser elements are provided in the hermetically sealed space. The collimate lens has a non-lens portion fixed to the lid portion, and a plurality of lens portions connected and aligned along one direction and surrounded by the non-lens portion when viewed from a light extracting surface side of the collimate lens.