H01S5/3401

LASER ASSEMBLY WITH ACTIVE POINTING COMPENSATION DURING WAVELENGTH TUNING

An assembly (10) for generating a laser beam (12) includes a beam steering assembly (18); a laser assembly (16) that is tunable over a tunable range; and a controller (20). The laser assembly (16) generates a laser beam (12) that is directed at the beam steering assembly (18). The controller (20) dynamically controls the beam steering assembly (18) to dynamically steer the laser beam (12) as the laser assembly (16) is tuned over at least a portion of the tunable range. As a result thereof, the laser beam (12) is actively steered along a desired beam path (12A) while the wavelength of the laser beam (12) is varied.

QUANTUM CASCADE LASER
20180006434 · 2018-01-04 · ·

An active layer of a quantum cascade laser includes an active layer includes a plurality of emission regions and a plurality of injection regions. Each emission region includes an injection barrier layer, and an light-emitting quantum well layer that has at least two well layers, and that emits infrared light by undergoing an intersubband transition. Each injection region includes an extraction barrier layer, and a relaxation quantum well layer that creates an energy level for relaxing the energy of carriers from the each emission region. One of adjacent two well layers in the light-emitting quantum well layer of the each emission region on the side of the extraction barrier layer is deeper than a second well layer on the side of the injection barrier layer. The each emission region and the injection region are alternately stacked.

SURFACE-EMITTING SEMICONDUCTOR LIGHT-EMITTING DEVICE

A surface-emitting semiconductor light-emitting device includes a first semiconductor layers, an active layer on the first semiconductor layer, a photonic crystal layer on the active layer and a second semiconductor layer on the photonic crystal layer. The photonic crystal layer include first protrusions in a first region and second protrusions in a second region. A spacing of adjacent first protrusions is greater than a spacing of adjacent second protrusions. The second semiconductor layer includes a first layer and a second layer on the first layer. The first layer covers first and second protrusions so that a first space remains between the adjacent first protrusions. The first layer includes a first portion provided between the adjacent second protrusions. The second layer includes a second portion provided between the adjacent first protrusions. The first space between the adjacent first protrusions is filled with the second portion of the second layer.

WIDELY TUNABLE COMPACT TERAHERTZ GAS LASERS

Disclosed is a laser system including a first laser and a second laser. The first laser includes a laser cavity, and a gas phase molecular gain medium disposed in the laser cavity, the gain medium having an absorption band. The second laser is a solid state laser configured to be continuously tunable, with respect to an emission wavelength of the second laser, over the absorption band of the gain medium, and the second laser is tuned to pump rotational vibrational transitions in the gain medium to achieve a rotational population inversion.

Method of making QCL with optimized brightness and related methods

A method is for making a QCL having an InP spacer within a laser core, the QCL to provide a CW output in a high quality beam. The method may include selectively setting parameters for the QCL. The parameters may include a number of the InP spacer, a thickness for each InP spacer, a number of stages in the laser core, and a dopant concentration value in the laser core. The method may include forming the QCL based upon the parameters so that a figure of merit comprises a greatest value for a fundamental mode of operation for the QCL.

Quantum cascade laser system with angled active region

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

TECHNOLOGIES FOR A PHASE-LOCKED TERAHERTZ PLASMONIC LASER ARRAY WITH MICROCAVITIES
20220360045 · 2022-11-10 ·

A plasmonic laser array device may comprise a first microcavity element having a first radiating end facet and a second radiating end facet opposite the first radiating end facet in a longitudinal direction of the device. The device may comprise a second microcavity element having a third radiating end facet and a fourth radiating end facet opposite the third radiating facet in the longitudinal direction. The device may comprise a first microcavity gap configured to separate the first microcavity element and the second microcavity element in the longitudinal direction. The device may comprise a bottom (e.g., metal) layer configured to underly the first microcavity element, the second microcavity element, and the first microcavity gap. The device may comprise an arrangement that places the first microcavity element and the second microcavity element into a phase-locked orientation for a phased-locked operation of the plasmonic laser array device.

QUANTUM CASCADE LASER DEVICE

A quantum cascade laser device includes a QCL element; a lens; and a lens holder having a small-diameter hole, a large-diameter hole, and a counterbore surface. At least a part of a side surface of the lens is fixed to an inner surface of the large-diameter hole in a state where an edge portion of an incident surface of the lens is in contact with the counterbore surface. A central axis of the small-diameter hole is eccentric from that of the large-diameter hole. The side surface of the lens is positioned with respect to the inner surface of the large-diameter hole along a direction from the central axis of the large-diameter hole toward the central axis of the small-diameter hole. A central axis of the lens is disposed at a position closer to the central axis of the small-diameter hole than to the central axis of the large-diameter hole.

PHOTODETECTOR AND BEATING SPECTROSCOPY DEVICE

A beating spectroscopy device includes: first and second quantum cascade lasers; a quantum cascade detector; and a sample holder configured to hold a sample on an optical path between the second quantum cascade laser and the quantum cascade detector. Lights from the first and second quantum cascade lasers are detected by the quantum cascade detector while a wavelength of the light from the second quantum cascade laser is changed to scan a frequency of a beating signal having a frequency in accordance with a wavelength difference between the lights from the first and second quantum cascade lasers.

Monolithically Integrated Mid-Infrared Two-Dimensional Optical Phased Array
20230036709 · 2023-02-02 · ·

A novel, monolithically integrated mid-IR optical phased array (OPA) structure which eliminates the wafer bonding process to achieve highly efficient surface emitting optical beam steering in two dimensions is disclosed. Since solar energy is about 15-20 times smaller than that at 1.55 um, mid-IR is more favorable for the atmospheric transmission due to lower solar radiance backgrounds. For the beam steering, thermo-optic phase shifting is used for azimuthal plane beam steering and laser wavelength tuning is used for elevation plane beam steering. The OPA structure disclosed comprises a wavelength- tunable a QCL, a 1×32 splitter, thermo-optic phase-shifters, and sub-wavelength grating emitters. The disclosed OPA provides a low-cost, low-loss, low-power consumption, robust, small footprint, apparatus that may be used with expendable UAV swarms. A LiDAR may be created by monolithically integrating a QCD with the apparatus. Other embodiments are described and claimed.