A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement. The vertical laser element is arranged above the first semiconductor layer arrangement on the side of the first main surface in a beam path of electromagnetic radiation reflected at one of the lateral boundaries of the first semiconductor layer arrangement (112).

Systems and methods disclosed herein include a vertical cavity surface emitting laser (VCSEL) device that includes an anode, a cathode, and one or more curved apertures located in an epitaxial layer between the anode and the cathode, each of the one or more curved apertures having an aperture edge and one or more oxidation bridges crossing the curved aperture that allow current to flow inside the curved aperture, in which when a current signal is applied to the VCSEL, current flow between the anode and the cathode is distributed along the aperture edge of the one or more curved apertures.

A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.

A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

A photonic device for providing light radiation comprises a wave guide, an N-type semiconductor layer covering the wave guide and an active region formed by a stack of layers made of III-V materials. The photonic device also comprises a plurality of P-type semiconductor pillars arranged on, and in contact with, the active region. At least a first metal pad is in ohmic contact with the free portion of the N-type layer and at least a second metal pad is in ohmic contact with the P-type pillars.

An optical circulator is a device that routes optical pulses from port to port in a predetermined manner, e.g. in a 3-port optical circulator, optical pulses entering port 1 are routed out of port 2, while optical pulses entering port 2 exit out of port 3 and optical pulses fed into port 3 exit out of port 3. Currently such an optical circulator is made of discrete components such as magnetooptic garnets, rare-earth magnets and optical polarizers that are packaged together with fiber optic elements. Disclosed herein is a different kind of optical circulator that is monolithically integrated on a single semiconductor substrate and that is applicable for the routing of optical pulses. The embodied invention will enable photonic integrated circuits to incorporate on-chip optical circulator functionality thereby allowing much more complex optical designs to be implemented monolithically.

A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.

The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.

A semiconductor device manufacturing system includes: a PL evaluation apparatus that evaluates wavelengths of photoluminescent light produced by individual optical modulators on a single semiconductor wafer; an electron beam drawing apparatus that draws patterns of diffraction gratings of laser sections that adjoin respective optical modulators on the wafer; and a calculation section that receives the wavelengths of the photoluminescent light from the PL evaluation apparatus, calculates densities of respective diffraction gratings so that differences between the wavelengths of the photoluminescent light and oscillating wavelengths of the laser sections become a constant, and sends the densities calculated to the electron beam drawing apparatus for drawing respective diffraction grating patterns on the respective laser sections.