An assembly (10) for generating a laser beam (12) includes a beam steering assembly (18); a laser assembly (16) that is tunable over a tunable range; and a controller (20). The laser assembly (16) generates a laser beam (12) that is directed at the beam steering assembly (18). The controller (20) dynamically controls the beam steering assembly (18) to dynamically steer the laser beam (12) as the laser assembly (16) is tuned over at least a portion of the tunable range. As a result thereof, the laser beam (12) is actively steered along a desired beam path (12A) while the wavelength of the laser beam (12) is varied.

A communication module includes a laser driving unit (LDU) and one or more multifunction illumination units. The one or more multifunction illumination units are be coupled to the LDU with an electrical connection and configured to transmit both electrical power and data.

A light source device includes an optical fiber; a beam light source configured to coaxially combine laser beams of different peak wavelengths to generate and emit a wavelength-combined beam; and an optical coupling device configured to allow the wavelength-combined beam emitted from the beam light source to be incident on the optical fiber. The optical coupling device includes a first cylindrical lens configured to focus the wavelength-combined beam in a first plane and having a first focal length, a second cylindrical lens configured to focus the wavelength-combined beam in a second plane and having a second focal length, and a third cylindrical lens having a third focal length greater than the first focal length and configured to focus the wavelength-combined beam in the first plane to be incident on the first cylindrical lens.

A multi-wavelength light-emitting semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a substrate, a first reflector on the substrate, a light emission layer on the first reflector, second reflectors on corresponding active regions; and apertures on corresponding active regions. The light emission layer includes active regions. Each of the active regions includes a primary emission wavelength different from each other.

A light emitting device includes: a base portion comprising: an upward-facing surface, and a frame defining an inner lateral surface; a plurality of semiconductor laser elements arranged on the upward-facing surface and surrounded by the frame; a cover portion supported by the frame and disposed above the plurality of semiconductor laser elements; and a protrusion extending from a lower surface of the cover portion toward the upward-facing surface. Light emitted from each of the plurality of semiconductor laser elements is incident on a lateral surface of the protrusion, passes through the protrusion, is reflected at the boundary surface, and is transmitted through the cover portion.

Integrated laser sources emitting multi-wavelengths of light with reduced thermal transients and crosstalk and methods for operating thereof are disclosed. The integrated laser sources can include one or more heaters and a temperature control system to maintain a total thermal load of the gain segment, the heater(s), or both of a given laser to be within a range based on a predetermined target value. The system can include electrical circuitry configured to distribute current to the gain segment, the heater(s), or both. The heater(s) can be located proximate to the gain segment, and the distribution of current can be based on the relative locations. In some examples, the central laser can be heated prior to being activated. In some examples, one or more of the plurality of lasers can operate in a subthreshold operation mode when the laser is not lasing to minimize thermal perturbations to proximate lasers.

Apparatus and methods for altering one or more spectral, spatial, or temporal characteristics of a light-emitting device are disclosed. Generally, such apparatus may include a volume Bragg grating (VBG) element that receives input light generated by a light-emitting device, conditions one or more characteristics of the input light, and causes the light-emitting device to generate light having the one or more characteristics of the conditioned light.

A light emitting device includes a base, a lid portion, a plurality of semiconductor laser elements, and a collimate lens. The lid portion is fixed to the base to define a hermetically sealed space by the lid portion and the base. The semiconductor laser elements are provided in the hermetically sealed space. The collimate lens has a non-lens portion fixed to the lid portion, and a plurality of lens portions connected and aligned along one direction and surrounded by the non-lens portion when viewed from a light extracting surface side of the collimate lens.

In various embodiments, the beam parameter product and/or numerical aperture of a laser beam is adjusted utilizing a step-clad optical fiber having a central core, a first cladding, an annular core, and a second cladding.

A first burying layer burying a side of a first ridge structure is formed by selective growth using a first selective growth mask and a third selective growth mask. The first burying layer is formed by regrowth from a surface of a second semiconductor layer on a side of the first ridge structure. At the same time, by selective growth using a second selective growth mask and a fourth selective growth mask, a second burying layer burying a side of a second ridge structure is formed. The second burying layer is formed by regrowth from a surface of a fourth semiconductor layer on a side of the second ridge structure.