In some examples, a device includes a memory configured to store a pre-warning threshold level for a parameter of a power switch. The device also includes a logic circuit configured to receive a signal from a controller and set the pre-warning threshold level in response to receiving the signal from the controller. The logic circuit is also configured to determine that a magnitude of the parameter of the power switch does not satisfy the pre-warning threshold level. The logic circuit is further configured to output an alert to the controller in response to determining that the magnitude of the parameter does not satisfy the pre-warning threshold level.

A circuit breaker distribution system is configured to provide selective coordination. The system comprises a solid-state switch disposed as a main or upstream breaker and a switch with an over current protection disposed as a branch or downstream breaker. The solid-state switch comprises a microcontroller including a processor and a memory, and computer-readable logic code stored in the memory which, when executed by the processor, causes the microcontroller to: allow repeated pulses of current through to the branch or downstream breaker in an event of an overload or short circuit, and choose a maximum current limit for the solid-state switch as a “chop level” such that the chop level is chosen higher than a rated current of the solid-state circuit breaker but low enough that the solid-state switch is not damaged from repeated pulses over a period of time needed to switch OFF the branch or downstream breaker.

A surge protection device with a high breaking capacity includes a housing with at least two lead-out electrodes, and a voltage limiting device and a thermal tripping mechanism that are installed in the housing. The voltage limiting device includes a voltage limiter, a first electrode and a second electrode that are positioned and installed in an insulating cover. The thermal tripping mechanism includes a fixed assembly, a movable assembly and a thermal trigger device. The fixed assembly and the movable assembly form a plurality of displacement switches arranged in series. The thermal trigger device is disposed in linkage with the movable assembly and includes a metal trigger sheet, a fusible alloy and an energy storage member. One end of the metal trigger sheet is fixed on the movable assembly, and the other end of the metal trigger sheet is fixed on the second electrode through welding by the fusible alloy.

The present disclosure relates to a bidirectional semiconductor circuit breaker including a primary circuit unit connected between a power supply and a load and in which a first semiconductor switch and a second semiconductor switch are arranged in series and a snubber circuit unit of which one end is connected to the front end of the first semiconductor switch and the other end is connected to the rear end of the second semiconductor switch, in parallel. The snubber circuit unit includes a first circuit line, a second circuit line, and a third circuit line of which one end and the other end are connected to the first circuit line and the second circuit line, respectively, and in which a first resistor and a second resistor are arranged in series, and provide a snubber circuit which is applicable to a bidirectional fault current and satisfies semiconductor protection and current restraining performance.

A three-output DC voltage supply for providing a positive, an intermediate, and a negative voltage supply is provided which includes a positive DC voltage bus and a negative DC voltage bus configured to be connected to a DC power source, a first voltage divider connected between the positive DC voltage bus and the negative DC voltage bus, wherein the first voltage divider includes a voltage-setting component and a resistive component, and a short-circuit protection component including first and second transistors of opposite types connected between the voltage-setting component and the resistive component, wherein a base of the first transistor is connected to a collector of the second transistor to define a first base/collector node, a base of the second transistor is connected to a collector of the first transistor to define a second base/collector node, and the intermediate voltage supply is provided by either the first or second gate/collector nodes.

A power semiconductor device protection circuit includes: a drive circuit that drives a power semiconductor device; a current detector which includes a first resistor and an inductor connected in parallel; and a detection circuit that detects a short-circuit condition of the power semiconductor device. One end of the first resistor and one end of the inductor are connected to one terminal of the power semiconductor device. The detection circuit detects the short-circuit condition of the power semiconductor device by comparing a voltage of the one terminal of the power semiconductor device, which changes as a function of current flow through the first resistor and the inductor, with a short-circuit detection voltage. A reference potential of the drive circuit is connected to the other end of the first resistor and the other end of the inductor.

A solid-state fuse device includes a switch a gate driver connected to the switch and configured to transition the switch from a closed state to an open state when at least one of an overcurrent measurement exceeds a predetermined overcurrent threshold or a voltage drop across the switch exceeds a predetermined saturation voltage threshold.

Improved overcurrent detection and mitigation systems, methods, and techniques for a BMS are described herein. A BMS monitor may detect an overcurrent using two different techniques. The first technique may detect an overcurrent based on average power over different, overlapping time periods. The second technique may detect an overcurrent based on determining a modeled junction temperature of a switching device.

Disclosed are an electrostatic protection circuit, a display substrate and a display apparatus. The electrostatic protection circuit includes: a plurality of first transistors (11) on a base substrate, each of which includes a gate, an active layer (112), a first electrode (113), a second electrode (114) and a connection part (115). Gates of the first transistors (11) are connected to each other to form a control line (12). The first electrode (113) of each first transistor (11) is electrically connected to a panel crack detect line (PL), the connection part (115) is connected between the first electrode (113) and the second electrode (114), and the active layer (112) and the gate of each first transistor (11) are arranged in an overlapping manner and insulated and separated from each other to form a first capacitor. The control line (12) is electrically connected to a first power supply line (VSS).

Improved overcurrent detection and mitigation systems, methods, and techniques for a BMS are described herein. A BMS monitor may detect an overcurrent using two different techniques. The first technique may detect an overcurrent based on average power over different, overlapping time periods. The second technique may detect an overcurrent based on determining a modeled junction temperature of a switching device.