Disclosed herein is a clamper including a current source that is connected between an external electrode and an internal node and generates a predetermined constant current, a diode having an anode connected to the internal node, and a current mirror that generates a second current corresponding to a first current flowing via the diode and draws the second current from the internal node to a reference voltage node.

In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (∝ Iref) and a second set value (∝ Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (∝ Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.

Systems, methods, techniques and apparatuses of a semiconductor control system are disclosed. One exemplary embodiment is a method for protecting a semiconductor switch comprising receiving a first voltage during a second blanking period following a first blanking period; determining whether a short circuit fault is occurring by comparing the first voltage to a fast detection threshold corresponding to a first value of a drain-source voltage of the semiconductor switch; if a short circuit is not occurring: receiving a second voltage after the second blanking period ends; determining whether a short circuit fault is occurring by comparing the second voltage to a slow detection threshold corresponding to a second value of the drain-source voltage; and if a short circuit fault is occurring, opening the semiconductor switch, wherein the first value of the drain-source voltage is greater than the second value of the drain-source voltage.

A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element. The control circuit further includes a plurality of alarm detection circuits respectively detecting a plurality of abnormalities, a protection circuit stopping the gate control circuit responsive to the detection of any abnormality, an alarm signal generation circuit generating an alarm signal responsive to the detected abnormality, a warning detection circuit detecting a warning before any of the abnormalities is detected, and a pulse generation circuit generating a warning signal while the warning is being detected. The alarm signal is a one-shot pulse having a pulse width thereof corresponding to the detected abnormality, such that alarm signals generated responsive to different abnormalities have different pulse widths. The warning signal includes a plurality of successive pulses, each of which has a pulse width smaller than any of the pulse widths of the alarm signals.

A semiconductor device includes, for example, an external terminal, an output element, a detecting element configured to detect occurrence of a negative voltage at the external terminal, and an off-circuit configured to forcibly turn off the output element when the detecting element detects occurrence of the negative voltage.

A three-output DC voltage supply for providing a positive, an intermediate, and a negative voltage supply is provided which includes a positive DC voltage bus and a negative DC voltage bus configured to be connected to a DC power source, a first voltage divider connected between the positive DC voltage bus and the negative DC voltage bus, wherein the first voltage divider includes a voltage-setting component and a resistive component, and a short-circuit protection component including first and second transistors of opposite types connected between the voltage-setting component and the resistive component, wherein a base of the first transistor is connected to a collector of the second transistor to define a first base/collector node, a base of the second transistor is connected to a collector of the first transistor to define a second base/collector node, and the intermediate voltage supply is provided by either the first or second gate/collector nodes.

In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (∝ Iref) and a second set value (∝ Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (∝ Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.

A photovoltaic array of photovoltaic solar cells; a smart dynamic programmable circuit breaker for electrically providing a pulsed 100 microseconds duration short circuit to the photovoltaic array electrical outputs, wherein a response time for the smart dynamic programmable circuit breaker is more than 1 millisecond when responding to a short circuit; a computer program comprising instructions that when executed by the processor perform functions that control the smart dynamic programmable circuit breaker, the computer program comprising: instructions to command the smart dynamic programmable circuit breaker to initiate the 100 microsecond pulsed short circuit; instructions to measure a current magnitude and current rise time of the smart photovoltaic system outputs during the 100 microsecond pulsed short circuit; and instructions to select a behavior curve from a plurality of smart dynamic programmable circuit breaker behavior curves 10% above the current magnitude and current rise time during the pulsed short circuit.

The present disclosure is directed to a safety device for photovoltaic installations. The safety device includes a first terminal adapted to connect to a first output terminal of a solar panel, a second terminal adapted to connect to a second output terminal of the solar panel, a first switching module connected between the first terminal and the second terminal. The first switching module comprising a first switch and a first impedance connected in series. The first impedance includes one terminal connected to the first terminal and the first switch includes one terminal connected to the second terminal. A control module is adapted to read a control signal and drive the operation of the first switch based on the read value of the control signal. A powersupply means is adapted to supply power to the control module.

A semiconductor device, overvoltage detection structure is described that includes a current path including a Zener diode connected in series with a fuse. The Zener diode is configured to conduct a current in response to an overvoltage condition at a semiconductor device and the fuse is configured to permanently break the current path of the overvoltage detection structure in response to the Zener diode conducting the current.