An ESD protection circuit includes a trigger transistor that is responsive to a detection signal indicating an ESD event. The trigger transistor pulls the voltage of a hold node towards a voltage of a power supply rail in response to the detection signal indicating an ESD event. The ESD protection circuit includes a replica trigger transistor whose leakage current controls current provided to the hold node after the detection signal no longer indicates an ESD event to compensate for leakage current through the trigger transistor.

A system and method for combining positive and negative voltage electrostatic discharge (ESD) protection into a clamp that uses cascoded circuitry, including detecting, by an electrostatic discharge protection system, a voltage pulse on an input pin of an integrated circuit (IC) controller, the IC controller coupled between a power supply node and a ground supply node; determining, by the ESD protection circuit, an ESD event on the input pin based on the voltage detected on the input pin; and/or controlling, by the ESD protection circuit during the ESD event, one or more clamps to transport the voltage pulse from the input pin of the IC controller to the power supply node.

The present disclosure provides an electrostatic discharge (ESD) protection circuit for a chip, including: a monitoring unit, configured to generate a trigger signal when there is an ESD pulse on a power supply pad; a plurality of controllable drive units, connected to the monitoring unit, and each of the controllable drive units being configured to switch an operating state under a control of a control signal, wherein the operating state includes an output state, and the output state refers to generating a drive signal according to the trigger signal; and a discharge transistor, connected to the plurality of controllable drive units, and configured to be turned on under a drive of the drive signal so as to discharge an electrostatic charge to the ground pad.

An Electrostatic Discharge (ESD) protection circuit includes a first discharge path and a second discharge path. The first discharge path is located between a first potential terminal and a second potential terminal. The second discharge path is located between the first potential terminal and the second potential terminal, and is connected to the first discharge path in parallel. The first discharge path and the second discharge path are used for discharging electrostatic charges. At least one of the first discharge path and the second discharge path includes a Silicon Controlled Rectifier (SCR).

In the examples provided herein, an electrostatic discharge (ESD) recording circuit has a first memristive element coupled to a pin of an integrated circuit. The first memristive element switches from a first resistance to a second resistance when an ESD event occurs at the pin, and the first resistance is less than the second resistance. The ESD recording circuit also has shunting circuitry to shunt energy from an additional ESD event away from the first memristive element.

Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.

An ESD protection circuit is provided, including a negative ESD protection module and a positive ESD protection module, where the negative ESD protection module includes a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor, and the positive ESD protection module includes a fourth field effect transistor. When a negative ESD event occurs, there is a comparatively large transient voltage at a gate of a P-type enhanced GaN power device relative to a source of the P-type enhanced GaN power device. Therefore, a displacement current from the source to the gate of the P-type enhanced GaN power device is generated on the charging capacitor. A voltage drop generated by the displacement current on the first resistor may enable the first field effect transistor and the second field effect transistor to form a path when the first field effect transistor is turned on.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.

An electrical wiring device including a ground fault interrupt assembly, the ground fault interrupt assembly comprising a ground fault interrupt circuit, being formed on a first printed circuit board, and a trip mechanism, the ground fault interrupt circuit being configured to detect a differential current between the line conductor and the neutral conductor and to trigger the trip mechanism to electrically decouple the plurality of line terminals from the plurality of load terminals, according to a predetermined criterion, based, at least in part, on the different current; and a USB power supply circuit being formed on a second printed circuit board disposed within the compartment, the USB power supply circuit providing to the at least one USB port, wherein the first printed circuit board and the second printed circuit board are separated by a distance within the inner compartment.