A power electronic converter includes a plurality of converter cells, each comprising an inductive power transfer stage having a coupled inductor coupling first and second sides of the converter cell, wherein the inductor comprises a first winding around a first magnetic core and a second winding around a second magnetic core; wherein the first winding and the first magnetic core are separated from the second winding and the second magnetic core by a flat electric insulation layer that provides electric insulation between the first and second sides of the converter cell; wherein at least two of the coupled inductors are arranged so that their insulation layers form a single contiguous insulation layer.

A dual-input power supply has two power paths that connect a server to electrical Each power path has a first stage that comprises a power-factor correction circuit. The power paths share a common second stage that comprises a dc/dc converter. The first stages of the power paths collectively defining a pair of first stages that is disposed either within a package that is off the motherboard or without a package and on the motherboard. Similarly, the second stage is disposed either within a package that is off the motherboard or without a package and on the motherboard.

We disclose a III-nitride semiconductor based heterojunction power device comprising: a first heterojunction transistor formed on a substrate, the first heterojunction transistor comprising: a first III-nitride semiconductor region formed over the substrate, wherein the first III-nitride semiconductor region comprises a first heterojunction comprising at least one two dimensional carrier gas; a first terminal operatively connected to the first III-nitride semiconductor region; a second terminal laterally spaced from the first terminal and operatively connected to the first III-nitride semiconductor region; a first plurality of highly doped semiconductor regions of a first polarity formed over the first III-nitride semiconductor region, the first plurality of highly doped semiconductor regions being formed between the first terminal and the second terminal; a first gate region operatively connected to the first plurality of highly doped semiconductor regions; and a second heterojunction transistor formed on the substrate. The second heterojunction transistor comprises: a second III-nitride semiconductor region formed over the substrate, wherein the second III-nitride semiconductor region comprises a second heterojunction comprising at least one two dimensional carrier gas; a third terminal operatively connected to the second III-nitride semiconductor region; a fourth terminal laterally spaced from the third terminal in the first dimension and operatively connected to the second III-nitride semiconductor region; a second gate region being formed over the second III-nitride semiconductor region, and between the third terminal and the fourth terminal. One of the first and second heterojunction transistors is an enhancement mode field effect transistor and the other of the first and second heterojunction transistors is a depletion mode field effect transistor.

A power converter apparatus includes a power module assembly including a power module and a cooler overlapping with the power module to allow the cooler to cover both sides of the power module, and a capacitor and a low voltage direct-current (DC)-DC converter (LDC) which are coupled in a state of pressing the power module assembly on both sides of the power module assembly.

A direct-current voltage conversion circuit having on/off control with a dead-time period performed alternately on a first switch and a second switch included in a direct-current voltage conversion circuit. When alternating current flows in a series circuit part including two transformers magnetically independent, current flows in an output circuit including a secondary side of one transformer, and energy is accumulated in the other transformer. The permeabilities of the magnetic cores in the first and second transformers is between 15 and 120.

A circuit comprising: a first switch having: first side (FS) connected to first capacitor's second side (1C2S); and second side (SS) connected to reference node (RN); a second switch having: FS connected to second voltage node (2VN); and SS connected to 1C2S; a third switch having: FS connected to the first capacitor's first side (1C1S); and SS connected to 2VN; a fourth switch having: FS connected to a third voltage node (3VN); and SS connected to 1C1S; a fifth switch having: FS connected to second capacitor's second side (2C2S); and SS connected to RN; a sixth switch having: FS connected to 3VN; and SS connected to 2C2S; a seventh switch having: FS connected to the second capacitor's first side (2C1S); and SS connected to 3VN; and an eighth switch having: FS connected to first voltage node; and SS connected to 2C1S.

A semiconductor circuit includes: a first inductor part configured to connect in series with a source electrode of a first semiconductor element; and a second inductor part configured to connect in series with a source electrode in a second semiconductor element that is configured to connect in parallel with the first semiconductor element; the first inductor part and the second inductor part are arranged to generate an induced electromotive force in the first inductor part and the second inductor part by way of a magnetic interaction so that the currents flowing in the first inductor part and the second inductor part are reinforced in the same direction.

A semiconductor device includes a semiconductor element, a first wiring member, a second wiring member, and a terminal. The semiconductor element includes a first main electrode and a second main electrode on a side opposite from the first main electrode. The first wiring member is connected to the first main electrode. The terminal has a first terminal surface connected to the second main electrode and a second terminal surface. The second terminal has four sides. Two of the four sides are parallel to a first direction intersecting the thickness direction, and other two sides of the four sides are parallel to a second direction perpendicular to the thickness direction and the first direction. The second wiring member is connected to the second terminal surface of the terminal through solder, and has a groove. The groove overlaps one or two of the four sides of the second terminal surface.

This uninterruptible power supply device includes an input module provided with a plurality of conductor wires having a plate shape including at least a plurality of AC input wires, and an uninterruptible power supply module. In addition, the plurality of AC input wires each extend in an X direction in which the uninterruptible power supply module and the input module are adjacent to each other, and have AC input cable attachment portions in which an AC input cable is attached. The AC input cable attachment portions are disposed so as to be separated from each other in a Y direction, which is a direction in which a front side and a rear side of the input module face each other.

An isolated switch-mode power supply includes at least one input, at least one output, and a power circuit coupled between the at least one input and the at least one output for converting an input voltage or current to an output voltage or current. The power circuit includes a transformer having one or more primary windings, one or more secondary windings, an electrical insulator, and a core magnetically coupling the one or more primary windings and the one or more secondary windings. Upper portions of the primary and secondary windings are covered with the electrical insulator. Other example switchmode power supplies, transformers, magnetic chokes and methods are also disclosed.