A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1),

Ru.sub.αX.sub.1-α  (1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5<α<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.

The present invention relates to an Ising Machine utilizing a network of spin Hall nano-oscillators (SHNOs) suitable or computational tasks such as optimization problems. The spin Hall nano-oscillator based Ising machine is provided with a tuning nitarranged to effect the characteristics of at least one individual spin Hall nano-oscillators of the array; and a SHNO read-out unit arranged to detect and transfer a state of at least a one individual spin Hall nano-oscillators of the array.

A method and system for generating voltage and/or current oscillations in a single magnetic layer is provided. The method comprises applying a direct voltage/current to the layer in a longitudinal direction; and developing a longitudinal voltage between a pair of longitudinal voltage leads and/or a transverse voltage between a pair of transverse voltage leads. The magnetic layer comprises a ferrimagnetic or antiferrimagnetic material having a first and second magnetic sub-lattice, wherein the first sub-lattice is a dominant sub-lattice such that the charge carriers at the Fermi energy originate predominantly from the dominant sub-lattice and the charge carriers at the Fermi energy are spin polarised. In some embodiments, the dominant current carrying sub-lattice may lack inversion symmetry.

A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

An antenna device includes: antennas; magnetic oscillation element units converting electrical energy to high-frequency power, and a modulator outputting electrical energy input from outside to at least two magnetic oscillation element units, with a time difference to differentiate phases of high-frequency power converted from electrical energy by at least two magnetic oscillation element units. The magnetic oscillation element units respectively include a pair of electrodes, and further include, between the pair of electrodes, a PIN layer, a free layer, and an intermediate layer. A resistance value of an element configured by the PIN, free and intermediate layers changes according to the angle between the magnetization direction of the PIN layer and the magnetization direction of the free layer. The antennas transmit electromagnetic waves to open space outside the magnetic oscillation element units with the supply of high-frequency power.

An apparatus includes a spin torque oscillator, a sensor, and a processing unit. The spin torque oscillator is configured to receive a current and to generate a microwave output signal. The sensor is configured to detect the microwave output signal and to detect changes to frequency of the detected microwave output signal responsive to changes in an external magnetic field. The processing unit is configured to receive a sensed signal from the sensor. The processing unit is further configured to process the sensed signal and the changes to the frequency to determine magnitude and direction associated with the external magnetic field.

An oscillator includes a spin current source, and a free layer coupled to the spin current source. The free layer has a magnetization hard axis that is parallel to a quantization axis of a spin current injected by the spin Hall effect of the spin current source.