An oscillation circuit includes a first oscillation circuit that includes: a first diode that has a first negative differential resistance; a first composite inductor in which a first inductor and a second inductor are connected in series, is connected to the first diode in series; a second diode that has a second negative differential resistance and is connected to the first inductor in parallel; and a third diode that has a third negative differential resistance, is connected to the first diode in series, and is connected to the first composite inductor in parallel, wherein a burst pulse is output from a common connection point of the first inductor, the second inductor, and the second diode.

An oscillation circuit includes a first oscillation circuit that includes: a first diode that has a first negative differential resistance; a first composite inductor in which a first inductor and a second inductor are connected in series, is connected to the first diode in series; a second diode that has a second negative differential resistance and is connected to the first inductor in parallel; and a third diode that has a third negative differential resistance, is connected to the first diode in series, and is connected to the first composite inductor in parallel, wherein a burst pulse is output from a common connection point of the first inductor, the second inductor, and the second diode.

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

An oscillating element includes a substrate, negative resistance elements which are electrically connected to the substrate, antennas which are electrically connected one-to-one to each negative resistance element and which transmit or receive an electromagnetic wave, a pad electrically connected to a power supply source for supplying power to the antennas, and a conductor which electrically connects the pad and the antennas to each other. The conductor is constituted of a common wiring that is common to the antennas and individual wirings from the common wiring to each antenna. The individual wirings differ from each other with respect to a sectional area, resistivity, and a length in accordance with a position on the substrate of an antenna connected to each wiring to reduce a difference in wiring resistances caused based on a distance between the antenna connected to each wiring and the pad.

An oscillating element includes a substrate, negative resistance elements which are electrically connected to the substrate, antennas which are electrically connected one-to-one to each negative resistance element and which transmit or receive an electromagnetic wave, a pad electrically connected to a power supply source for supplying power to the antennas, and a conductor which electrically connects the pad and the antennas to each other. The conductor is constituted of a common wiring that is common to the antennas and individual wirings from the common wiring to each antenna. The individual wirings differ from each other with respect to a sectional area, resistivity, and a length in accordance with a position on the substrate of an antenna connected to each wiring to reduce a difference in wiring resistances caused based on a distance between the antenna connected to each wiring and the pad.

A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

A semiconductor element comprising: an antenna array that is provided with a plurality of antennas each including a semiconductor layer having an electromagnetic wave gain or carrier nonlinearity with respect to a terahertz wave; and a coupling line that synchronizes adjacent antennas in the antenna array with each other at a frequency of the terahertz wave, wherein the coupling line includes a plurality of first regions connected to the adjacent antennas respectively and a second region provided between the plurality of first regions, wherein the second region has impedance different from impedance of each of the first regions, and wherein the second region has a loss larger than a loss of the individual first region at a frequency other than a resonance frequency of the antenna array.