An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Provided is a terahertz light source device including an antenna, a plurality of wire electrodes configured to connect the antenna to a power source, a capacitor connected to the wire electrodes between the antenna and the power source, and a plurality of resonance tunneling diodes connected to the wire electrodes between the capacitor and the antenna, and configured to generate a terahertz wave by coupling with the capacitor as a parallel resonance circuit with respect to the power source.

In an antenna array including first through fifth antennas, the second, first, and third antennas are arranged in this order in a first direction, and the fourth, first, and fifth antennas are arranged in this order in a second direction. A conductor layer of the second antenna is connected to a conductor layer of the first antenna via a first coupling line extending in the first direction, the conductor layer of the first antenna is connected to a conductor layer of the third antenna via a second coupling line extending in the first direction, a conductor layer of the fourth antenna is connected to the conductor layer of the first antenna via a third coupling line extending in the second direction, and the conductor layer of the first antenna is connected to a conductor layer of the fifth antenna via a fourth coupling line extending in the second direction.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An oscillator includes a substrate, and a plurality of oscillation structures and a power feed structure. The power feed structure includes a power source and a bias supply unit, the oscillation structures each include one antenna and an N piece of a semiconductor element electrically connected to the antenna. The semiconductor elements exhibit negative resistance characteristics when driven by the power feed structure, and out of the N piece thereof, a P piece thereof are connected in parallel, and an S piece thereof are connected in series, an F piece thereof are supplied with bias in the forward direction, and an R piece thereof are supplied with bias in a reverse direction. The semiconductor element in one of the oscillation structures exhibits asymmetrical current-voltage properties between forward bias and reverse bias. At least one of the N, P, S, F, and R differs from another.

In an antenna array including first through fifth antennas, the second, first, and third antennas are arranged in this order in a first direction, and the fourth, first, and fifth antennas are arranged in this order in a second direction. A conductor layer of the second antenna is connected to a conductor layer of the first antenna via a first coupling line extending in the first direction, the conductor layer of the first antenna is connected to a conductor layer of the third antenna via a second coupling line extending in the first direction, a conductor layer of the fourth antenna is connected to the conductor layer of the first antenna via a third coupling line extending in the second direction, and the conductor layer of the first antenna is connected to a conductor layer of the fifth antenna via a fourth coupling line extending in the second direction.