Patent classifications
H03F1/526
Multi-zone radio frequency transistor amplifiers
RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.
Particle accelerator system
A particle accelerator system including a particle accelerator that accelerates charged particles, a signal source that outputs high frequency power for accelerating the charged particles in the particle accelerator, an amplifying unit that amplifies the high frequency power from the signal source, and supplies the high frequency power to the particle accelerator, the amplifying unit including a plurality of semiconductor amplifiers using a semiconductor, and a control unit that controls an operation of the amplifying unit. The control unit controls output of at least one of the plurality of semiconductor amplifiers.
RADIO FREQUENCY UNIT
Disclosed is a radio frequency unit, including a power amplification module, a filtering module and a signal connector; where one end of the signal connector is connected to the filtering module, and the other end is connected to the power amplification module; the power amplification module is provided with a power amplification connector; a guide structure for guiding the power amplification connector to be coaxially aligned with the signal connector is formed on one end of the signal connector connected with the power amplification module; and through the guide structure, the power amplification connector is coaxially connected with the signal connector.
REDUNDANT SYSTEM AND METHOD OF OPERATING A REDUNDANT SYSTEM
A redundant system for processing at least one signal is described wherein the redundant system has N+1 devices include N operational devices and one reserve device. The N operational devices and the reserve device are interconnected with each other. The redundant system includes a system control integrated within one of the devices of the redundant system. The redundant system further includes switches that are associated with the operational devices. In case of a failure of a respective operational device, the system control is configured to cause at least one of the devices to operate the switch associated with the respective operational device having the failure. Further, a method of operating a redundant system for processing at least one signal is described.
TRANSMISSION SYSTEM
According to one embodiment, a transmission system may include a plurality of signal processing apparatuses. The signal processing apparatus are connected in series. The signal processing apparatus includes a plurality of signal processors, and a switcher. The signal processors generate an output signal by performing signal processing of an input signal from an earlier-stage signal processing apparatus. The signal processors supply the output signal into which is included an abnormality signal if the input signal does not include the abnormality signal and also the output signal does not satisfy the criteria. The switcher receives a plurality of output signals output from the plurality of signal processors. The switcher supplies an output signal of the plurality of output signals.
MULTI-ZONE RADIO FREQUENCY TRANSISTOR AMPLIFIERS
RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.
DIFFERENTIAL AMPLIFIER
A differential amplifier is provided. The differential amplifier includes a first load, a second load, a current source, a differential pair circuit, a first and a second switch circuit. The differential pair circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first switch circuit controls the first and the second transistors, and the second switch circuit controls the third and the fourth transistors. Through the control and selection of the first and second switch circuits, a differential pair is selected in the differential pair circuit to receive and process a first input signal and a second input signal for signal.
Audio power amplifier for reduced click and pop (CnP)
A power amplifier provides reduction of click and pop in audio applications. The power amplifier includes a first amplifier and an auxiliary amplifier. The auxiliary amplifier is used to ramp the power amplifier output from ground to an offset voltage to reduce the “click and pop” sound. The first amplifier and the auxiliary amplifier having a shared feedback loop. An output of the first amplifier and an output of the auxiliary amplifier may be switchably coupled to the shared feedback loop. A wave generator controls a switch to couple the first amplifier output or the auxiliary amplifier output to the shared feedback loop.
Differential amplifier
A differential amplifier is provided. The differential amplifier includes a first load, a second load, a current source, a differential pair circuit, a first and a second switch circuit. The differential pair circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first switch circuit controls the first and the second transistors, and the second switch circuit controls the third and the fourth transistors. Through the control and selection of the first and second switch circuits, a differential pair is selected in the differential pair circuit to receive and process a first input signal and a second input signal for signal.
Breakdown protection circuit for power amplifier
Systems, methods, and apparatuses for improving reliability and/or reducing the likelihood of breakdown of an amplifier or a component thereof. A system can include a sensing circuit electrically coupled to a transistor of the amplifier and configured to sense an AC voltage associated with the transistor. A protection circuit can be electrically coupled to the sensing circuit and the amplifier and can be configured to supply a DC voltage to the transistor of the amplifier based on the AC voltage sensed by the sensing circuit.