An amplifier includes a first stage and a second stage. The first stage includes a first output and a second output. The second stage includes an output, a first transistor and a second transistor. The first transistor includes a drain coupled to the first output of the first stage, and a source coupled to the output of the second stage. The second transistor includes a drain coupled to the second output of the first stage, and a gate coupled to the output of the second stage.

Amplifier devices includes a first amplifier connected to receive an input voltage. The first amplifier outputs an internal voltage. These structures also include a second amplifier having an input node connected to receive the internal voltage and an output node outputting an output voltage. A resistive feedback loop is connected to the input node and the output node of the second amplifier. A first cross-coupled bandwidth boosting stage is connected to the input node of the second amplifier and a second cross-coupled bandwidth boosting stage connected to the output node of the second amplifier. The cross-coupled bandwidth boosting stages form a distributed differential positive feedback structure.

The present invention discloses a signal output circuit applying bandwidth broadening mechanism for an image signal transmission apparatus that includes a first driving circuit and a second driving circuit. The first driving circuit includes a continuous time linear equalizer (CTLE) and is configured to receive a digital input signal to perform a high frequency enhancement thereon to increase a bandwidth of the digital input signal to generate a first output signal, in which a zero point and two poles of a frequency response of the first driving circuit are determined by circuit parameters thereof. The second driving circuit is configured to receive and amplify the first output signal to generate a second output signal for an image receiving apparatus.

A transimpedance amplifier (TIA) for converting an input current at an input node into an output voltage at an output node, the TIA comprising: a first amplifier stage having a first input coupled to the input node and a first output; a feedback path between the first output and the first input; a second amplifier stage in the feedback path having a second input, the second input coupled to the first output of the first amplifier stage; a feedback resistor in the feedback path coupled between an output of the second amplifier stage and first input of the first amplifier stage; and an output stage, comprising: a load resistor coupled between a reference voltage node and a T-coil, the T-coil comprising first and second inductors coupled in series at an inductor node, the T-coil coupled between the first output and the load resistor, the inductor node coupled to the output node of the TIA.

Transconductor circuits with programmable tradeoff between bandwidth and flicker noise are disclosed. An example circuit includes an input port, an output port, a plurality of transistors, and a switch arrangement that includes a plurality of switches, configured to change coupling between the input port, the output port, and the transistors to place the transconductor circuit in a first or a second mode of operation. An input capacitance of the transconductor circuit operating in the first mode is larger than when the transconductor circuit is operating in the second mode. In the first mode, having a larger input capacitance results in a decreased flicker noise because the amount of flicker noise is inversely proportional to the input capacitance. In the second mode, having a smaller input capacitance leads to an increased flicker noise but that is acceptable for wide-bandwidth applications because wide-bandwidth signals may be less sensitive to flicker noise.

Apparatus and methods for a low-load-modulation power amplifier are described. Low-load-modulation power amplifiers can include multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see low modulation of its load between the power amplifier's fully-on and fully backed-off states. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained.

Aspects of the subject disclosure may include a power splitter. The power splitter can include a first splitter branch having a first amplifier with passive components, a second splitter branch having a second amplifier with passive components. The first splitter branch is substantially electrically isolated from the second splitter branch by configuring the first and second splitter branches to have similar phase delays. Outputs of the power splitter can be electrically coupled to the multi-stage amplifier. The power splitter can be manufactured on a single semiconductor die or integrally formed on the same semiconductor die with other circuits such as the multi-stage amplifier. Other embodiments are disclosed.

A differential amplifier is provided. The differential amplifier includes a first single-ended amplifying means including at least a first terminal and a second terminal, a second single-ended amplifying means including at least a first terminal and a second terminal, a first transmission line, and a second transmission line. In this context, the first terminal of the first single-ended amplifying means is connected to the second terminal of the second single-ended amplifying means via the first transmission line. In addition to this, the first terminal of the second single-ended amplifying means is connected to the second terminal of the first single-ended amplifying means via the second transmission line.

A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.

CRLH lines including left-handed shunt inductors and left-handed series capacitors are provided on gate side transmission lines of a plurality of FETs.