Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

A differential amplifier includes a positive leg, a negative leg, and biasing circuitry. The positive leg includes at least one positive leg transistor, a first positive leg degeneration capacitor, and positive leg degeneration capacitor biasing circuitry configured to bias the first degeneration capacitor during a reset period. The negative leg includes at least one negative leg transistor, a negative leg degeneration capacitor, and negative leg degeneration capacitor biasing circuitry configured to bias the negative leg degeneration capacitor during the reset period. The biasing circuitry biases current of both the at least one positive leg transistor and the at least one negative leg transistor based on capacitance of the first positive leg degeneration capacitor, capacitance of the first negative leg degeneration capacitor, and a sampling time during an amplification period. The differential amplifier may be a stage amplifier in an Analog to Digital Converter (ADC).

This disclosure relates to variable-gain amplifiers that include degeneration circuits configured to adapt to a gain mode that is currently being implemented. For example, a variable-gain amplifier can operate in a plurality of gain modes to amplify a signal with different levels of amplification. The variable-gain amplifier can include a gain circuit configured to amplify a signal and a degeneration circuit coupled to the gain circuit. The degeneration circuit can include an inductor and a switching-capacitive arm coupled in parallel to the inductor. The degeneration circuit can operate based on a current gain mode to change an inductance for the variable-gain amplifier.

A wideband amplifier includes a first stage and a second stage. The first stage includes a transconductance transistor driven by an input signal through an input transformer. The transconductance transistor couples to a cascode transistor forming an output node for the first stage. The second stage couples the output node from the first stage through an output transformer to drive an output transistor.

A radio-frequency module includes an integrated circuit (IC) device and an external inductor provided outside the IC device. The IC device includes a plurality of low-noise amplifiers, one or more inductors, and a switching circuit. The plurality of low-noise amplifiers includes a plurality of transistors in one to one correspondence. The one or more inductors are coupled to one or more of the plurality of transistors. Each inductor is coupled to the emitter or source of a corresponding one of the plurality of transistors. The switching circuit is coupled between the emitter or source of each of the plurality of transistors and the external inductor. The external inductor is coupled between the switching circuit and ground in series with each of the one or more inductors via the switching circuit.

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.

A multi-gain LNA with inductive source degeneration is presented. The inductive source degeneration is provided via a tunable degeneration network that includes an inductor in parallel with one or more switchable shunting networks. Each shunting network includes a shunting capacitor that can selectively be coupled in parallel to the inductor. A capacitance of the shunting capacitor is calculated so that a combined impedance of the inductor and the shunting capacitor at a narrowband frequency of operation is effectively an inductance. The inductance is calculated according to a desired gain of the LNA. According to one aspect, the switchable shunting network includes a resistor in series connection with the shunting capacitor to provide broadband frequency response stability of the tunable degeneration network. According to another aspect, the LNA includes a plurality of selectable branches to further control gain of the LNA.

A radio-frequency module includes an integrated circuit (IC) device and an external inductor provided outside the IC device. The IC device includes a plurality of low-noise amplifiers, one or more inductors, and a switching circuit. The plurality of low-noise amplifiers includes a plurality of transistors in one to one correspondence. The one or more inductors are coupled to one or more of the plurality of transistors. Each inductor is coupled to the emitter or source of a corresponding one of the plurality of transistors. The switching circuit is coupled between the emitter or source of each of the plurality of transistors and the external inductor. The external inductor is coupled between the switching circuit and ground in series with each of the one or more inductors via the switching circuit.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a “common source” input transistor, e.g., input field effect transistor (FET), and the second configured in a “common gate” configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.