An amplifier circuit includes a resistor divider (R.sub.REF) comprising n resistive elements, two main nodes defined at each end thereof, two readout nodes (d.sub.1, d.sub.2), resistor nodes (q) defined between adjacent resistive elements, and an input current source (I.sub.REF) connected or connectable to the first main node (a). The resistor divider (R.sub.REF) comprises two arrays of addressable switch elements controllable by a feedback signal (s.sub.FB) to be open or closed. The amplifier circuit includes a differential pair of transistors (T.sub.1, T.sub.2), wherein source terminals of each of the transistors (T.sub.1, T.sub.2) are connected to the second node (b), gate terminals of the transistors (T.sub.1, T.sub.2) are connected to input signals (v.sub.1, v.sub.2), drain terminals of the transistors (T.sub.1, T.sub.2) are connected to current sources (I.sub.1, I.sub.2), and bulk terminals of the transistors (T.sub.1, T.sub.2) are connected to the readout nodes (d.sub.1, d.sub.2). The amplifier circuit functions as a difference amplifier, wherein the bulk terminals affect a threshold of the respective transistors (T.sub.1, T.sub.2) so as to add or subtract a differential signal derived from the readout nodes (d.sub.1, d.sub.2) of the resistor divider (R.sub.REF) determined by the feedback signal (s.sub.FB).

A differential amplifier includes first and second MOS transistors of a first conductivity type which constitute a differential input circuit, a bias current source which supplies a bias current to the first and second MOS transistors, and a third MOS transistor of the first conductivity type provided between the bias current source and the first and second MOS transistors and constituted to limit a back-gate voltage of the first and second MOS transistors.

In one example an amplifier includes a bias circuit, an open-loop gain stage including a first PMOS having a gate coupled to a first node, a source coupled to a second node, a drain coupled to a third node, and a bulk coupled to the bias circuit, a second PMOS having a gate coupled to a ground node, a source coupled to the second node, a drain coupled to a fourth node, and a bulk coupled to the bias circuit, a first NMOS having a drain and a gate coupled to the third node and a source coupled to a fifth node, a second NMOS having a drain coupled to the fourth node, a gate coupled to the third node, and a source coupled to the fifth node, an adjustable resistor coupleable between the third and fourth nodes, and a buffer stage coupled to the open-loop gain stage.

A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.

The present disclosure relates to semiconductor structures and, more particularly, to a differential circuit with automatic parasitic neutralization and gain boost and methods of manufacture. The structure includes a plurality of auxiliary circuit devices with back-gate controls to perform a boost gain, and a differential pair of circuit devices which are connected to the auxiliary circuit devices.

A power amplifier arrangement comprises a power amplifier comprising at least one transistor having a first gate and a second gate. The first gate is configured to receive a radio frequency input signal superimposed with a first control signal, and the second gate is configured to receive a second control signal. The first control signal is a linearization signal varying in relation to an envelope of the input signal and the second control signal is a temperature compensation signal varying in relation to a temperature of the power amplifier, or vice versa.

A differential input amplification-stage circuit comprises a voltage unit, first and second bulk-driven transistors, first and second mirror current sources, and a differential amplifier unit. The first and the second bulk-driven transistors respectively receive first and second input voltages, and converts the first and the second input voltages into first and second output currents. The differential amplifier unit separately outputs first and second adjustment currents under an action of voltages output by the first to the third voltage output ends. The first and the second mirror current sources respectively output first and second predetermined currents according to the first output current and the first adjustment current, and the second output current and the second adjustment current, so as to maintain transconductance constancy of the differential input amplification-stage circuit. Therefore, output stability is improved.

An apparatus has four transistors. The first and third transistors each have a gate coupled to a first input terminal and second input terminal respectively, a source coupled to a current source and to a first terminal of a bias voltage source, and a substrate coupled to a second terminal of the bias voltage source. The second and fourth transistors each have a gate coupled to the first input terminal and the second input terminal respectively, a source coupled to the drain of the first and third transistors respectively, a drain coupled to a lower voltage supply and a substrate coupled to its source. The bias voltage source increases the threshold voltages of the first and third transistors above the second and fourth transistors, respectively. This ensures that the first and third transistors turn on after the second and fourth transistors, respectively.

In one example an amplifier includes a bias circuit, an open-loop gain stage including a first PMOS having a gate coupled to a first node, a source coupled to a second node, a drain coupled to a third node, and a bulk coupled to the bias circuit, a second PMOS having a gate coupled to a ground node, a source coupled to the second node, a drain coupled to a fourth node, and a bulk coupled to the bias circuit, a first NMOS having a drain and a gate coupled to the third node and a source coupled to a fifth node, a second NMOS having a drain coupled to the fourth node, a gate coupled to the third node, and a source coupled to the fifth node, an adjustable resistor coupleable between the third and fourth nodes, and a buffer stage coupled to the open-loop gain stage.

A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N) of each of the stacked transistor units (112A, 112B, 112C).