Patent classifications
H03F3/19
Amplifier circuitry for carrier aggregation
An electronic device may include wireless circuitry with a baseband processor, a transceiver circuit, a front-end module, and an antenna. The front-end module may include amplifier circuitry such as a low noise amplifier for amplifying received radio-frequency signals. The amplifier circuitry is operable in a non-carrier-aggregation mode and a carrier aggregation mode. The amplifier circuitry may include an input transformer that is coupled to multiple amplifier stages such as a common gate amplifier stage, a cascode amplifier stage, and a common source amplifier stage. The common gate amplifier stage may include switches for selectively activating a set of cross-coupled capacitors to help maintain input impedance matching in the non-carrier-aggregation mode and the carrier-aggregation mode. The common source amplifier stage may include additional switches for activating and deactivating the common source amplifier stage to help maintain the gain in the non-carrier-aggregation mode and the carrier-aggregation mode.
RADIO FREQUENCY SYSTEM SWITCHING POWER AMPLIFIER SYSTEMS AND METHODS
Systems and method for improving operation of a radio frequency system are provided. One embodiment includes a switching power amplifier that outputs an amplified analog electrical signal based on an input electrical signal and voltage of an envelope voltage supply rail. The switching power amplifier includes a first transistor with a gate that receives the input electrical signal, a source electrically coupled to the envelope voltage supply rail, and a drain electrically coupled to an output of the switching power amplifier; a second transistor with a gate that receives the input electrical signal, a source electrically coupled to ground, and a drain electrically coupled to the output; and a third transistor with a gate that receives the input electrical signal, a drain electrically coupled to the envelope voltage supply rail, and a source electrically coupled to an output of another switching power amplifier.
RADIO FREQUENCY SYSTEM SWITCHING POWER AMPLIFIER SYSTEMS AND METHODS
Systems and method for improving operation of a radio frequency system are provided. One embodiment includes a switching power amplifier that outputs an amplified analog electrical signal based on an input electrical signal and voltage of an envelope voltage supply rail. The switching power amplifier includes a first transistor with a gate that receives the input electrical signal, a source electrically coupled to the envelope voltage supply rail, and a drain electrically coupled to an output of the switching power amplifier; a second transistor with a gate that receives the input electrical signal, a source electrically coupled to ground, and a drain electrically coupled to the output; and a third transistor with a gate that receives the input electrical signal, a drain electrically coupled to the envelope voltage supply rail, and a source electrically coupled to an output of another switching power amplifier.
COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.
COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.
METHOD TO MITIGATE UNDESIRED OSCILLATOR FREQUENCY MODULATION EFFECTS IN-SIDE A SYNTHESIZER DUE TO INTERFERENCE SIGNALS AND SYNTHESIZER CIRCUIT
A synthesizer circuit to generate a local oscillator carrier signal for a baseband signal includes a controlled oscillator comprising a phase lock loop and an oscillator configured to generate an oscillating signal. A pulling compensation circuit is configured to generate a correction signal for a present output of the phase locked loop using information on an error of the oscillating signal, information on a present sample of a baseband signal and a preceding correction signal for a preceding output of the phase locked loop.
METHOD TO MITIGATE UNDESIRED OSCILLATOR FREQUENCY MODULATION EFFECTS IN-SIDE A SYNTHESIZER DUE TO INTERFERENCE SIGNALS AND SYNTHESIZER CIRCUIT
A synthesizer circuit to generate a local oscillator carrier signal for a baseband signal includes a controlled oscillator comprising a phase lock loop and an oscillator configured to generate an oscillating signal. A pulling compensation circuit is configured to generate a correction signal for a present output of the phase locked loop using information on an error of the oscillating signal, information on a present sample of a baseband signal and a preceding correction signal for a preceding output of the phase locked loop.
System and Method of RF Power Transmission, Modulation and Amplification
An apparatus, system, and method are provided for energy conversion. For example, the apparatus can include a trans-impedance node, a reactive element, and a trans-impedance circuit. The reactive element can be configured to transfer energy to the trans-impedance node. The trans-impedance circuit can be configured to receive one or more control signals and to dynamically adjust an impedance of the trans-impedance node. The trans-impedance node, as a result, can operate as an RF power switching supply based on the one or more control signals.
System and Method of RF Power Transmission, Modulation and Amplification
An apparatus, system, and method are provided for energy conversion. For example, the apparatus can include a trans-impedance node, a reactive element, and a trans-impedance circuit. The reactive element can be configured to transfer energy to the trans-impedance node. The trans-impedance circuit can be configured to receive one or more control signals and to dynamically adjust an impedance of the trans-impedance node. The trans-impedance node, as a result, can operate as an RF power switching supply based on the one or more control signals.
Electronically-scanned antennas with distributed amplification
An electronically scanned antenna comprising a travelling wave guiding structure having a bottom conductor and a top conductor developing each along a first direction, the top conductor comprising a plurality of first conductive patches arranged periodically along said first direction and connected in series by tuning circuits; the electronically scanned antenna further comprising a plurality of amplifiers arranged for compensating resistive and radiation losses along the length of the travelling wave guiding structure.