An attenuation circuit comprising: a connection-node for connecting to an RF connection; an isolation-capacitor connected in series between the connection-node and an internal-node; a first-bias-resistor connected in series between a first-control-node and the internal-node; a second-bias-resistor connected in series between the internal-node and a second-control-node; a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node; a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node; a first-decoupling-capacitor connected in series between the first-control-node and the reference-node; and a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.

A switch comprising a first switching circuit assembly having a first pair of identical diodes in first anti-series configuration. The first switching circuit assembly constructed and arranged to cancel capacitance change wherein capacitance increases in a first diode of the first pair of identical diodes and, simultaneously, capacitance decreases in a second diode of the first pair of identical diodes with a first selectively applied radio frequency (RF) voltage input. The switch comprises a second switching circuit assembly having a second pair of identical diodes in second anti-series configuration. The second switching circuit assembly constructed and arranged to cancel capacitance change wherein capacitance increases in a first diode of the second pair of identical diodes and, simultaneously, capacitance decreases in a second diode of the second pair of identical diodes with a second selectively applied RF voltage input. A system and method are also provided.

An attenuation circuit comprising: a connection-node for connecting to an RF connection; an isolation-capacitor connected in series between the connection-node and an internal-node; a first-bias-resistor connected in series between a first-control-node and the internal-node; a second-bias-resistor connected in series between the internal-node and a second-control-node; a first-attenuation-diode connected in series between the first-control-node and the internal-node, wherein the anode of the first-attenuation-diode is closest to the first-control-node; a second-attenuation-diode connected in series between the internal-node and the second-control-node, wherein the anode of the second-attenuation-diode is closest to the internal-node; a first-decoupling-capacitor connected in series between the first-control-node and the reference-node; and a second-decoupling-capacitor connected in series between the second-control-node and the reference-node.