Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.

A radio frequency (RF) transmission line is described. The RF transmission line includes a first ground line, a second ground line, and a signal line disposed on a substrate and forming a coplanar waveguide. A plasma limiter feature is integrated into an internal surface of one or more of the first ground line, the second ground line, and the signal line. The plasma limiter decreases a gap distance between the signal line and the associated ground line. The gap distance is selected, together with a gas pressure, to control a voltage at which the gas within the gap breaks down, targeted at a breakdown power of 1 W across a wide bandwidth. The plasma limiter thus limits a power transmitted by way of the RF transmission line for protecting a sensitive integrated circuit.

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

A protection circuit configured to protect delicate electronics from high power signals is disclosed herein. To that end, the protection circuit includes a limiter circuit comprising a phase changing material to prevent high power signals from reaching one or more electronic circuits. The phase changing material assumes a limiting state automatically when an energy of an applied signal exceeds a threshold, which limits the energy of the signal passed on to any associated electronics.

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

A protection circuit configured to protect delicate electronics from high power signals is disclosed herein. To that end, the protection circuit includes a limiter circuit comprising a phase changing material to prevent high power signals from reaching one or more electronic circuits. The phase changing material assumes a limiting state automatically when an energy of an applied signal exceeds a threshold, which limits the energy of the signal passed on to any associated electronics.

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

A radio frequency (RF) transmission line is described. The RF transmission line includes a first ground line, a second ground line, and a signal line disposed on a substrate and forming a coplanar waveguide. A plasma limiter feature is integrated into an internal surface of one or more of the first ground line, the second ground line, and the signal line. The plasma limiter decreases a gap distance between the signal line and the associated ground line. The gap distance is selected, together with a gas pressure, to control a voltage at which the gas within the gap breaks down, targeted at a breakdown power of 1 W across a wide bandwidth. The plasma limiter thus limits a power transmitted by way of the RF transmission line for protecting a sensitive integrated circuit.

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.