Impedance matching circuit for radio-frequency amplifier. In some embodiments, an impedance matching circuit can include a primary metal trace having a first end configured to be capable of being coupled to a voltage source for the power amplifier, and a second end configured to be capable of being coupled to an output of the power amplifier. The impedance matching circuit can further include a secondary metal trace having first end coupled to the second end of the primary metal trace, and a second end configured to be capable of being coupled to an output node. The impedance matching circuit can further include a capacitance implemented between the first and second ends of the secondary metal trace, and be configured to trap a harmonic associated with an amplified signal at the output of the power amplifier.

Disclosed is an electromagnetic-circuit co-design approach for massively reconfigurable, multifunctional, and high-speed programmable metasurfaces with integrated chip tiling. The ability to manipulate the incident electromagnetic fields in a dynamically programmable manner and at high speeds using integrated chip tiling approach is also disclosed. The scalable architecture uses electromagnetic-circuit co-design of metasurfaces where each individual subwavelength meta-element is uniquely addressable and programmable. The disclosed device comprises a large array of such meta-elements. The design relies on integrated high frequency switches designed in conjugation with meta-element for massive reconfigurability of incident amplitude and phase. The disclosed chip is multi-functional and can perform beamforming, high speed spatial light modulation, dynamic holographic projections, and wavefront manipulation.

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

A trifilar transformer comprising: a first winding; a second winding; and a third winding, wherein one winding is mutually coupled to each of the other two windings, and wherein said other two windings are substantially not coupled to each other. At least one of the first winding, the second winding and the third winding may comprise a figure-of-eight winding, e.g. a clockwise loop and an anti-clockwise loop. In some embodiments, the trifilar transformer may comprise: a first winding; a second winding concentric or interwound with the first winding; and a third winding formed from a first winding part in series with a second winding part, the first winding part having a shape corresponding to the first winding and the second winding part having a shape corresponding to the second winding.

An Integrated Circuit (IC) containing at least one printed transformer-based matching network, which comprises: a) at least one printed transformer-based matching network with reduced size, which comprises a printed transformer with multiple internal ports in the form of electromagnetic discontinuities, introduced along the transverse dimension of the printed transformer; reactive elements, added to of the internal ports to thereby increase the order of the transformer-based matching network, the one or more reactive elements are printed along the transverse dimension of the matching network; a printed component connected to the input port of the matching network; a printed component connected to the output port of the matching network.

A transformer device includes a first coil, a second coil, and a third coil. The first coil includes a first ring structure, a second ring structure, a first connecting portion, and a first terminal, in which the first terminal is arranged on the first connecting portion and is located at a central location between the first ring structure and the second ring structure, the first terminal is connected to the first ring structure through the first connecting portion in a first direction, and connected to the second ring structure through the first connecting portion in a second direction, and the first direction is the opposite of the second direction. The second coil is configured to couple the first ring structure. The third coil is configured to couple the second ring structure, in which the second coil and the third coil have the same structure.

Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.

A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.