A power switch including input and output lines of characteristic impedance Z0, and a switching area connected serially between the input and output lines, the switching area being formed by N (integer >2) parallel conducting branchesand i belonging to {1, . . . , N}, each conducting branch having, from input to output lines of the switch, an input line portion with characteristic impedance Zbei in series with a switching circuit in series with an output line portion with characteristic impedance Zbsi, the switching circuit configured, in a first state, to block passage of a signal between the input and output line portions of the conducting branch and, in a second state, to transmit a signal between the input line portion and the output line portion of the conducting branch with a maximum reflection coefficient of 0.316, each of the characteristic impedances Zbei and Zbsi ranging from 0.75*N*Z0 to 1.35*N*Z0.

Examples are disclosed herein that relate to driving a resonant scanning mirror system using a linear LC resonant driving scheme. In one example, a resonant scanning mirror system includes a scanning mirror, first and second mirror drive elements, and a drive circuit to drive the scanning mirror at a resonant frequency. The drive circuit includes one or more signal sources configured to create a first source signal and a second source signal that is 180 degrees out of phase with the first source signal. The drive circuit further includes a buffer stage configured to receive the first and second source signals and output first and second drive signals, a first resonant LC stage configured to amplify the first drive signal for provision to the first mirror drive element, and a second resonant LC stage configured to amplify the second drive signal for provision to the second mirror drive element.

Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a MEMS array comprising a plurality of variable capacitors connected in series with the first variable capacitor, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

An adjustable rejection circuit with tunable impedance circuit is disclosed. In particular, a circuit is provided with an impedance tuner configured to match impedances for an antenna. The impedance tuner may include an LC circuit (inductor-capacitor circuit) with one or more elements of the LC circuit being variable. An adjustable rejection circuit may be placed in parallel with the impedance tuner. The adjustable rejection circuit may include a variable negative capacitance element that provides strong attenuation in frequencies of interest.

An adjustable rejection circuit with tunable impedance circuit is disclosed. In particular, a circuit is provided with an impedance tuner configured to match impedances for an antenna. The impedance tuner may include an LC circuit (inductor-capacitor circuit) with one or more elements of the LC circuit being variable. An adjustable rejection circuit may be placed in parallel with the impedance tuner. The adjustable rejection circuit may include a variable negative capacitance element that provides strong attenuation in frequencies of interest.

Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first variable capacitor disposed between the input and the output, a second variable capacitor disposed in parallel to the first variable capacitor, a MEMS array comprising a plurality of variable capacitors connected in series with the first variable capacitor, and a controller configured to tune the matching network between a first frequency for high-power operation and a second frequency for low-power operation.

A microelectromechanical resonant circulator device is providing, having a substrate, and at least three electrical ports supported on the substrate. At least three electromechanical resonator elements are connected with associated switch elements and an associated port. The switch elements are operative to provide commutation over time of the electromechanical resonator elements.

Examples are disclosed herein that relate to driving a resonant scanning mirror system using a linear LC resonant driving scheme. In one example, a resonant scanning mirror system includes a scanning mirror, first and second mirror drive elements, and a drive circuit to drive the scanning mirror at a resonant frequency. The drive circuit includes one or more signal sources configured to create a first source signal and a second source signal that is 180 degrees out of phase with the first source signal. The drive circuit further includes a buffer stage configured to receive the first and second source signals and output first and second drive signals, a first resonant LC stage configured to amplify the first drive signal for provision to the first mirror drive element, and a second resonant LC stage configured to amplify the second drive signal for provision to the second mirror drive element.

A tunable passband filter including a signal input port for receiving an input radio frequency (RF) signal, a signal output port for transmitting a filtered output RF signal, a first high-pass section having a first tunable microelectromechanical system (MEMS) switch array to receive the input RF signal from the signal input port, a second high-pass section having a second tunable MEMS switch array to transmit the output RF signal to the signal output port, and a low pass section operatively coupled between the first high-pass section and the second high-pass section, and having each of a first tunable MEMS bridge array, a second tunable MEMS bridge array, and a high impedance line. The tunable passband filter is configured to filter the input RF signal to yield the filtered output RF signal.

Integrated Microelectromechanical System (MEMS) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.