Patent classifications
H03H2009/02496
VIBRATOR DEVICE
A vibrator device includes a vibrator element having a base part, and a detection arm and a drive arm as a plurality of vibrating arms extending in a B direction as a first direction from the base part, a base body, and a support substrate configured to support the vibrator element with respect to the base body, wherein the support substrate includes a base-body fixation part to be fixed to the base body, an element support part configured to support the base part of the vibrator element, and a beam part configured to couple the base-body fixation part and the element support part to each other, and the support substrate has a plurality of recessed parts corresponding to the plurality of vibrating arms in an area which is located at a side of a surface opposed to the vibrator element, and on which at least a part of the vibrating arms overlaps in a plan view.
Three dimensional microstructures with selectively removed regions for use in gyroscopes and other devices
Three-dimensional (3D) micro-scale shells are presented with openings of various sizes and geometries on the surface. The shell consist of a suspended ring-shaped resonator, multiple support beams, a support post, and a cap region that connects the support beams to the support post. Shells with openings of various sizes and geometries allow the creation of micro electromechanical systems (MEMS) sensors and actuators with a wide range of engineered mechanical and electrical properties. The openings on the shell surface can, for example, control the mechanical quality factor (Q) and resonance frequencies of the shell when the shell is used as a suspended proof mass of a mechanical resonator of a vibratory gyroscope. The shells can also serve as mechanical supporting layers and/or an electrode connection layer for MEMS actuators and sensors that use 3D shells as proof masses.
CLOCK DEVICE
The present description concerns a clock signal generation device (902) comprising: a microelectromechanical resonant element (504); and at least one nanoelectromechanical transduction element (512).
Distributed-mode beam and frame resonators for high frequency timing circuits
Embodiments of the present disclosure relate generally to MEMS resonators. An exemplary MEMS resonator comprises a resonator beam having a length and a width. The length can be an integer multiple of the width. The integer multiple can be at least two. The resonator is configured to resonate at a frequency upon application of an input signal. The TCF of this resonator can be made close to zero, thus providing a temperature stable resonator. The exemplary MEMS resonator thereby has the advantages of high Q, low polarization voltage, low motional impedance and temperature stability of low frequency resonators while being able resonate at high frequencies of 30 MHz to 30 GHz.
Guided wave devices with selectively loaded piezoelectric layers
A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.
Dual-output microelectromechanical resonator and method of manufacture and operation thereof
A dual-output microelectromechanical system (MEMS) resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain, respectively, a first electrical signal having a first frequency and a second electrical signal having a second frequency that is less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. Also described herein are methods and systems for determining the temperature of the dual-output MEMS and for performing frequency compensation, as well as a method of manufacturing the dual-output MEMS.
Piezoelectric MEMS resonators based on porous silicon technologies
A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.
Piezoelectric MEMS Resonators based on Porous Silicon Technologies
A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.
Methods and devices for microelectromechanical resonators
MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
Temperature stable MEMS resonator
A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.