A method of making a temperature-compensated resonator is presented. The method comprises the steps of: (a) providing a substrate including a device layer; (b) replacing material from the device layer with material having an opposite temperature coefficient of elasticity (TCE) along a pre-determined region of high strain energy density for the resonator; (c) depositing a capping layer over the replacement material; and (d) etch-releasing the resonator from the substrate. The resonator may be a part of a micro electromechanical system (MEMS).

A MEMS device that suppresses variations in a resistance value caused by contracting vibrations in a direction in which a holding portion extends. The MEMS device includes a frame, a rectangular plate that receives an input of a driving signal, and holding portions that anchor the rectangular plate to the frame. The frame and the rectangular plate are both rectangular in shape. The holding portions are provided extending toward the frame from central areas of the opposing sides of the rectangular plate, and anchor the rectangular plate to the frame. A resistive film is formed in a region that follows a straight line connecting the holding portions that anchor the rectangular plate to the frame and that corresponds to no more than half a maximum displacement from a vibration distribution.

A method of trimming a component is provided in which the component is protected from oxidation or changes in stress after trimming. As part of the method, a protective glass cover is bonded to the surface of a semiconductor substrate prior to trimming (e.g., laser trimming) of a component. This can protect the component from oxidation after trimming, which may change its value or a parameter of the component. It can also protect the component from changes in stress acting on it or on the die adjacent it during packaging, which may also change a value or parameter of the component.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) vibrates at resonance frequency f.sub.0 and comprises at least one bulk acoustic resonator (110a, 110b). The ESR*A*f.sub.0 values of the resonator assembly (100) are in the range from 12 mm.sup.2 MHz to 83 mm.sup.2 MHZ.

A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a resonance mode. The resonator element (101) vibrates at resonance frequency f.sub.0 and comprises at least one bulk acoustic resonator (110a, 110b). The ESR*A*f.sub.0 values of the resonator assembly (100) are in the range from 12 mm.sup.2 MHz to 83 mm.sup.2 MHZ.