A high-voltage noise filter of a power conversion device includes: a metal housing; an anode bus bar connecting anodes of a power source and a power module; a cathode bus bar connecting cathodes thereof; a first magnetic core having a through hole where the anode bus bar and the cathode bus bar pass through; an X capacitor having one end connected to the anode bus bar, and the other end connected to the cathode bus bar; a first Y capacitor having one end connected to the anode bus bar, and the other end grounded; a second Y capacitor having one end connected to the cathode bus bar, and the other end grounded; and a first cooling unit connected to the first magnetic core and the metal housing. The anode bus bar partly faces the first cooling unit, and the cathode bus bar partly faces the first cooling unit.

An electronic apparatus includes a base including a surrounding wall defining first and second receiving spaces and having first and second end surfaces, and an electronic module including a terminal unit, and first and second electronic units respectively received in the first and second receiving spaces. The terminal unit includes two first terminals connected to the first electronic unit, two second terminals connected to the second electronic unit, and two connecting terminals, each of which has first and second sections respectively extending from the first and second end surfaces and connected to the first and second electronic units, and an interconnecting section embedded within the base and interconnecting the first and second sections.

Surface mount components and related methods involve thin film circuits between first and second insulating substrates. The thin film circuits may include passive components, including resistors, capacitors, inductors, arrays of such components, networks, or filters of multiple passive components. Such thin film circuit(s) can be sandwiched between first and second insulating substrates with internal conductive pads which are exposed to the outside of the surface mount component and electrically connected to external terminations. External terminations may include at least one layer of conductive polymer. Optional shield layers may protect the surface mount components from signal interference. A cover substrate may be formed with a plurality of conductive elements that are designed to generally align with the conductive pads such that conductive element portions are exposed in groups along surfaces of a device.

Disclosed are a common mode filter and a manufacturing method thereof. The common mode filter in accordance with an aspect of the present invention includes: a substrate; a filter layer including a coil and a dielectric layer and disposed on the substrate and configured to remove a signal noise; and a magnetic layer being laminated on the filter layer, and a surface of the filter layer being joined with the magnetic layer can be formed to be flat by having the coil embedded in a surface of the filter layer being joined with the magnetic layer in such a way that one surface of the coil is exposed.

An electromagnetic interference filter (EIF) system/method configured to maximize filter performance associated with EIF interconnects is disclosed. The disclosed system eliminates the use of conventional printed circuit board (PCB) interconnects and associated electrical connection terminals by attaching EIF filter capacitors and other components directly to power supply bus bars using a mechanical design and plastic encapsulating cover (PEC) that reduces parasitic inductances between the various EIF components while maximizing series inductance between +BUS/+CON connections and −BUS/−CON connections respectively through a permeable inductor core (PIC). The system/method may be applied to a variety of EIF applications including those associated with electric vehicles and the like.

An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.

An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.

A switch element is arranged between an input terminal and an output terminal. A signal from the input terminal is distributed by a capacitative element and supplied to the cathode side of a diode. An inductor is connected to the cathode side of the diode, and a smoothing circuit including a capacitative element and a resistor is connected to the anode side. The switch element has a control terminal connected to the anode of the diode, and turns off a path between the input terminal and the output terminal when a voltage is applied to the control terminal.

An interdigitated RF filter. The interdigitated RF filter includes input fingers connected to an input node and output fingers connected to an output node where at least one input finger is connected the output node or at least one output finger is connected to the input node. The described interdigitated RF filter can be implemented in various configurations such as series, shunt, ladder or a combination thereof.

A band-pass filter includes a first port, a second port, first to third high-pass filters provided between the first port and the second port in this order from a first-port side in a circuit configuration, and a low-pass filter provided between the second high-pass filter and the third high-pass filter in the circuit configuration. Each of the first to third high-pass filters forms an attenuation pole on a low-pass side of the passband. A frequency of the attenuation pole formed by the second high-pass filter is higher than a frequency of the attenuation pole formed by each of the first and third high-pass filters.