Patent classifications
H03H7/487
COMBINER/SPLITTER
A combiner/splitter is disclosed having a first trifilar transformer having a first outer transmission element electrically connected between a first port node and a first intermediate node. A second trifilar transformer has a second outer transmission element electrically connected between the first intermediate node and a second port node. A third trifilar transformer has a third outer transmission element electrically connected between the first port node and a second intermediate node. A fourth trifilar transformer has a fourth outer transmission element electrically connected between the second intermediate node and a third port node.
Quadrature combined Doherty amplifiers
Apparatus and methods for quadrature combined Doherty amplifiers are provided herein. In certain embodiments, a separator is used to separate a radio frequency (RF) input signal into a plurality of input signal components that are amplified by a pair of Doherty amplifiers operating in quadrature. Additionally, a combiner is used to combine a plurality of output signal components generated by the pair of Doherty amplifiers, thereby generating an RF output signal exhibiting quadrature balancing.
High performance tunable filter
Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.
COMBING POWER AMPLIFERS AT MILIMETER WAVE FREQUENCIES
A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.
Combing power amplifiers at millimeter wave frequencies
A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.
HIGH PERFORMANCE TUNABLE FILTER
Disclosed is a gallium arsenide (GaAs) enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors, metal-insulator-metal (MIM) capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (varactor) high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (TGV) are formed. The varactor along with the MIM capacitors and the 3D inductors is formed in an upper conductive structure on upper surface of the GaAs substrate. Lower conductive structure comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end (RFFE) devices.
Front-end chip for dual-pole antenna array
An apparatus includes a package and a beam former circuit. The package may be configured to be mounted on an antenna array at a center of four antenna elements. Each antenna element may include a dual-pole antenna having a vertical feed and a horizontal feed. The beam former circuit may be (i) disposed in the package, (ii) have a plurality of pairs of ports, (iii) configured to generate a plurality of radio-frequency signals in the ports while in a transmit mode and (iv) configured to receive the radio-frequency signals at the ports while in a receive mode. Each pair of the ports is configured to be directly connected to a respective one of the antenna elements. All of the ports may be spatially routed into alignment with the vertical feeds and the horizontal feeds in a single conductive plane of the antenna array.
Wilkinson power combiner, communication unit and method therefor
A Wilkinson power combiner (202) is described that includes: at least one input port (210) coupled to at least one output port (212, 214, 216, 218) by at least two power combining stages. A first power combining stage (204) of the at least two power combining stages is configured as a single-stage first frequency pass circuit and a second power combining stage (206) of the at least two stages is configured as a single-stage second frequency pass circuit, and wherein the first frequency is different to the second frequency.
WILKINSON POWER COMBINER, COMMUNICATON UNIT AND METHOD THEREFOR
A Wilkinson power combiner (202) is described that includes: at least one input port (210) coupled to at least one output port (212, 214, 216, 218) by at least two power combining stages. A first power combining stage (204) of the at least two power combining stages is configured as a single-stage first frequency pass circuit and a second power combining stage (206) of the at least two stages is configured as a single-stage second frequency pass circuit, and wherein the first frequency is different to the second frequency.
QUADRATURE COMBINED DOHERTY AMPLIFIERS
Apparatus and methods for quadrature combined Doherty amplifiers are provided herein. In certain embodiments, a separator is used to separate a radio frequency (RF) input signal into a plurality of input signal components that are amplified by a pair of Doherty amplifiers operating in quadrature. Additionally, a combiner is used to combine a plurality of output signal components generated by the pair of Doherty amplifiers, thereby generating an RF output signal exhibiting quadrature balancing.