A doubts rotated quart/crystal resonator comprises a cantilever-mounted doubts rotated resonating element having a line of geometrical symmetry running from a supported end to a free end which is not perpendicular to the resonating element's crystallographic/axis. A method of manufacturing the crystal resonator comprises cutting a doubly rotated quartz crystal plate with x.sup.I and z.sup.I axes defining the plate's plane into one or more resonating elements at a non-zero degrees in-plane rotation angle in relation to the plate's x.sup.I axis. The resonator has reduced sensitivity to mechanical acceleration.

In a bonded substrate according to an embodiment, Euler angles (φ1, θ1, ψ1) of a first quartz-crystal substrate satisfy 0°≤φ1≤2°, 123°≤θ1≤128°, and 31°≤ψ1≤44°, Euler angles (φ2, θ2, ψ2) of a second quartz-crystal substrate bonded over the first quartz-crystal substrate satisfy 83°≤φ2≤95°, 82°≤θ2≤95°, and 159°≤ψ2≤161°, and a thickness of the second quartz-crystal substrate is 0.17 to 0.19 times a wavelength of a surface acoustic wave.

A circuit device formed from a functional substrate. The circuit device comprises a functional substrate component and printed electronic elements formed on the functional substrate component. The printed electronic elements formed on the functional substrate component interact with the substrate component to perform a function and to modify the functional substrate component. The circuit device typically needs a passive base material that takes no functional part in the device operation except mechanical support.

Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a quartz substrate and a piezoelectric plate formed from LiTaO.sub.3 or LiNbO.sub.3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ρ in a range 1.50 g/cm.sup.3<ρ≤6.00 g/cm.sup.3, 6.00 g/cm.sup.3<ρ≤12.0 g/cm.sup.3, or 12.0 g/cm.sup.3<ρ≤23.0 g/cm.sup.3, and a thickness greater than 0.148λ, greater than 0.079λ, or greater than 0.036λ, respectively.

An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a transversal velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode. A dielectric material with a periodic structure contributes to the formation of the periodic structure of the velocity profile.

A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

An elastic wave device is provided that has an phase velocity optimum for a high-frequency oscillation as well as a preferred frequency temperature behavior that exhibits a cubic curve by utilizing a rotated Y-cut quartz crystal substrate with novel Euler angles of rotation. The elastic wave device includes a quartz crystal substrate and an excitation-electrode. The quartz crystal substrate is cut out from a quartz crystal body that has a particular three-dimensional crystallite orientation. The quartz crystal substrate is cut at rotation angles specified by right-handed Euler-angles. The excitation-electrode generates a plurality of plate waves on a front surface of the quartz crystal substrate. The quartz crystal substrate is cut at rotation angles in a given range. The selected vibration mode of the quartz crystal substrate is a plate wave having a primary and a secondary temperature coefficient in given ranges with Taylor expansion performed at a particular temperature.

An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO.sub.2), a piezoelectric thin film 12 including LiTaO.sub.3 crystal or LiNbO.sub.3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

In an acoustic wave device, in a rotated Y-cut crystal substrate to which a rotational angle based on a particular Euler angle is added, a vibration mode located farther in a low phase velocity area than the principal vibration has an electromechanical coupling coefficient K.sup.2 lower than that of the principal vibration, and the primary and secondary temperature coefficients of the principal vibration are approximately zero. The acoustic wave device includes a crystal substrate cut from a quartz crystal boule cut by a rotational angle specified by a right-handed Euler angle (ϕ, θ, Ψ), and at least one comb-shape excitation electrode to excite the crystal substrate to make a plate waves. The crystal substrate is made by cutting the quartz crystal boule such that the rotational angle is within ranges of ϕ=0±2°, θ=17.5° to 19.5°, and Ψ=0±2°.

Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.