H03H9/02622

Elastic wave device and manufacturing method thereof
11456716 · 2022-09-27 · ·

An elastic wave device includes an IDT electrode on a piezoelectric substrate, in which the IDT electrode includes first electrode fingers and second electrode fingers, where a portion in which the first electrode fingers and the second electrode fingers overlap with each other in an elastic wave propagation direction is defined as an intersection region including in a direction in which the first and second electrode fingers extend, a center region located on a center side and first and second edge regions respectively located on both sides of the center region, in the first and second edge regions, grooves defining recess portions are provided on the piezoelectric substrate, the first and second electrode fingers are provided inside of the grooves as the recess portions and are disposed on the piezoelectric substrate in the grooves.

Bonded body with piezoelectric monocrystalline substrate and supporting substrate

A piezoelectric monocrystalline substrate is composed of a material represented by LiAO.sub.3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of E.sub.xO.sub.(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89).

Search and navigation to specific document content
09721017 · 2017-08-01 ·

A computer-implemented system and method for search and navigation on a network to find and display specific search identified information in documents. Queries are sent to search engine services and responses comprising snippets are returned. Then, in response to only one or a few user inputs, documents are opened and locations of content matching or best matching the snippets are found reliably and distinguished in a display.

Acoustic wave device

An acoustic wave device includes a piezoelectric substrate in which a reverse-velocity surface is convex and an IDT electrode on the piezoelectric substrate. When an acoustic wave propagation direction is a first direction and a direction perpendicular or substantially perpendicular to the first direction is a second direction, the portion of the IDT electrode where first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region centrally located in the second direction and a first and second edge regions located on two sides of the center region. Recesses 17 and 18 are respectively provided in portions of the piezoelectric substrate located in the first and second edge regions between the portions where the first and second electrode fingers are provided.

SINGLE SUBSTRATE MULTIPLEXER
20220173723 · 2022-06-02 ·

At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.

SURFACE ACOUSTIC WAVE RESONATOR ARRANGEMENT
20220158611 · 2022-05-19 ·

A surface acoustic wave resonator arrangement comprises a piezoelectric substrate (100) and a surface acoustic wave resonator (110) which includes an interdigital transducer (111,112) disposed on the piezoelectric substrate (100). A trench (13 0) is disposed within the piezoelectric substrate (100) facing the resonator (110). Trench (130) causes reflected waves (143,144) in response to waves (141,142) leaking from the surface acoustic wave resonator. Trench (130) is configured such that the reflected acoustic waves (143,144) achieve phases at the edge (115) of the resonator (110) such that the accumulated phases of all the reflected waves received at edge (115) is zero or substantially zero, thereby avoiding constructive interference of the reflected waves with the acoustic waves resonating in the resonator. Thereby undesired acoustic coupling between resonators or influence of waves reflected at edges of the piezoelectric substrate or dicing lines is reduced.

Transversely-excited film bulk acoustic resonator with periodic etched holes
11323096 · 2022-05-03 · ·

There are disclosed acoustic resonators and method of fabricating acoustic resonators. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate except for portions of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern on the front surface includes an interdigital transducer (IDT) with interleaved fingers of the IDT disposed on the diaphragm. A periodic array of holes is provided in the diaphragm.

ROBUST LOCATION, RETRIEVAL, AND DISPLAY OF INFORMATION FOR DYNAMIC NETWORKS
20220121715 · 2022-04-21 ·

Content-specific URLs (CSURLs) are efficiently created to identify documents and intended visible content (Intended Content) within the documents that may be the whole of or only parts of the documents. The Intended Content of CSURLs can be affected, e.g. in the live web, by linkrot or content modification. Activation of CSURLs in conventional user agents (e.g. web browsers) results in automatic opening of underlying documents and/or offers to upgrade to a more capable user agent. Activation of CSURLs in a capable user agent result in automatic finding and distinguishing, e.g. by highlighting and scrolling, of matching content, which is robust in many circumstances wherein Intended Content has been non-trivially altered.

ACOUSTIC WAVE DEVICE
20220123711 · 2022-04-21 ·

An acoustic wave device includes a silicon substrate, a piezoelectric layer, and an IDT electrode. Each of the silicon substrate and the piezoelectric layer includes first and second opposed main surfaces. The IDT electrode is on the first main surface of the piezoelectric layer, and includes first and second electrode fingers. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is denoted as λ, a distance between the first main surface of the silicon substrate and the second main surface of the piezoelectric layer in a thickness direction of the silicon substrate is less than about 0.84λ. The first main surface of the silicon substrate is rougher than the first main surface of the piezoelectric layer.

PACKAGING SURFACE ACOUSTIC WAVE DEVICES WITH CONDUCTIVE TERMINALS
20220006439 · 2022-01-06 ·

Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.