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A composite substrate according to includes: a support substrate; and a piezoelectric layer arranged on one side of the support substrate, wherein an amplitude of a waviness having a spatial frequency of more than 0.045 cyc/mm according to a shape of the support substrate is 10 nm or less.

An acoustic wave device includes a piezoelectric layer, a pair of comb-shaped electrodes disposed on a first surface of the piezoelectric layer, each of the pair of comb-shaped electrodes including electrode fingers that excite an acoustic wave, a support substrate disposed at a second surface side of the piezoelectric layer, and having protruding portions and/or recessed portions on a first surface, which is closer to the piezoelectric layer, of the support substrate, each of the protruding portions and/or the recessed portions having a shape in which each of left and right side surfaces has linear slopes inclined at different angles with respect to the first surface of the piezoelectric layer in a cross-sectional view, and a second insulating layer located between the piezoelectric layer and the support substrate and disposed on the third surface, on which the protruding portions and/or the recessed portions are formed, of the support substrate.

A ladder-type filter includes a support substrate, a piezoelectric layer provided on the support substrate, a parallel resonator including first electrode fingers provided on the piezoelectric layer and having a first average pitch and a first average duty ratio, a largest first average pitch being equal to or greater than two times a thickness of the piezoelectric layer, a first end of the parallel resonator being coupled to a path between input and output terminals, a second end of the parallel resonator being coupled to a ground, and a series resonator connected in series between the input and output terminals, the series resonator including second electrode fingers provided on the piezoelectric layer and having a second average pitch and a second average duty ratio, a second average duty ratio in at least one series resonator being less than a smallest first average duty ratio.

An acoustic wave device includes a semiconductor support including a principal surface, a piezoelectric layer on the principal surface of the semiconductor support, and an IDT electrode on a principal surface of the piezoelectric layer. The IDT electrode includes first and second busbars, and first and second electrode fingers. The IDT electrode includes first gaps between the first busbar and respective second electrode fingers. A recess is provided in at least a portion of the semiconductor support substrate overlapping the first gaps as viewed in plan. No recess is provided in at least a portion of the semiconductor support substrate overlapping the IDT electrode as viewed in plan. The recess opens toward the piezoelectric layer.

A substrate for a surface acoustic wave device is constituted of a piezoelectric material and includes a first surface on which a surface acoustic wave propagates, and a second surface located opposite to the first surface. The second surface has an arithmetic mean roughness (Ra) of 0.2 μm to 0.4 μm, and there is satisfied either of the relationship between the arithmetic mean roughness (Ra) and mean spacing (S) of local peaks of Ra/S≥11, and the relationship between the arithmetic mean roughness (Ra) and mean spacing (Sm) of irregularities of Ra/Sm≥6.7. Further, the second surface has a maximum height (Rmax) of 2.5 μm to 4.5 μm, and there is satisfied either of the relationship between the maximum height (Rmax) and mean spacing (S) of local peaks of Rmax/S≥130, and the relationship between the maximum height (Rmax) and mean spacing (Sm) of irregularities of Rmax/Sm≥80.

A surface acoustic wave device includes a substrate that has a top surface and that contains a plurality of protrusions protruding from the top surface and spaced apart from each other, an intermediate layer disposed on the substrate so as to fill a recess formed among the protrusions, a piezoelectric layer disposed on the intermediate layer opposite to the substrate, and an electrode layer disposed on the piezoelectric layer opposite to the intermediate layer.

An elastic wave device is provided that has an phase velocity optimum for a high-frequency oscillation as well as a preferred frequency temperature behavior that exhibits a cubic curve by utilizing a rotated Y-cut quartz crystal substrate with novel Euler angles of rotation. The elastic wave device includes a quartz crystal substrate and an excitation-electrode. The quartz crystal substrate is cut out from a quartz crystal body that has a particular three-dimensional crystallite orientation. The quartz crystal substrate is cut at rotation angles specified by right-handed Euler-angles. The excitation-electrode generates a plurality of plate waves on a front surface of the quartz crystal substrate. The quartz crystal substrate is cut at rotation angles in a given range. The selected vibration mode of the quartz crystal substrate is a plate wave having a primary and a secondary temperature coefficient in given ranges with Taylor expansion performed at a particular temperature.

An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 μm to approximately 30.0 μm, and is substantially without iron (Fe).

An apparatus is disclosed for site-selective piezoelectric-layer trimming. The apparatus includes at least one surface-acoustic-wave filter with an electrode structure and a piezoelectric layer. The electrode structure has multiple gaps. The piezoelectric layer has a planar surface defined by a first (X) axis and a second (Y) axis that is perpendicular to the first (X) axis. The piezoelectric layer is configured to propagate an acoustic wave along the first (X) axis. The piezoelectric layer includes a first portion that supports the electrode structure and a second portion that is exposed by the multiple gaps of the electrode structure. The second portion has different heights across the second (Y) axis. The different heights are defined with respect to a third (Z) axis that is substantially normal to the planar surface.