An acoustic wave device has a multilayer piezoelectric substrate (MPS) structure and a multilayer interdigital transducer electrode (IDT). The multilayer piezoelectric substrate includes a piezoelectric layer over a support substrate. An additional (functional) layer can optionally be interposed between the piezoelectric layer and the support substrate, which can facilitate bonding between these layers and provide temperature compensation. The multilayer IDT is disposed over the piezoelectric layer and includes a first layer of a first material with higher density and a second layer of a different material with lower density. The interdigital transducer electrode also includes (mass loading) strips disposed over (e.g., adjacent, in contact with) the second layer, which advantageously facilitate suppression of transverse mode.

An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, a first dielectric film having a lower surface disposed on the IDT electrodes and the surface of the substrate, first strips formed of a first material having a density greater than a density of the first dielectric film disposed within the first dielectric film over tips of the interdigitated electrode fingers in the edge regions of the IDT electrodes, and second strips formed of a second material having a density greater than the density of the first dielectric film disposed within the first dielectric film in the gap regions of the IDT electrodes, laterally spaced from the first strips in a direction perpendicular to a direction of propagation of a main acoustic wave through the acoustic wave device, and extending only partially over the gap regions.

A surface acoustic wave (SAW) device includes a substrate; an interdigital transducer (IDT) having lead-out portions and arrays of interdigital electrodes formed on the substrate, wherein the interdigital electrodes includes central portions, end portions, and intermediate portions between the end portions and the lead-out portions, and a thickness of the interdigital electrodes at the end portions is greater than a thickness of the interdigital electrodes at the central portions and the intermediate portions, thereby forming protruding structures at the end portions of the interdigital electrodes; a protective layer formed on the protruding structures at the end portions of the interdigital electrodes; a first temperature compensation layer formed on the protective layer; a second temperature compensation layer formed on the first temperature compensation layer and on the central portions and the intermediate portions of the interdigital electrodes; and a passivation layer formed on the second temperature compensation layer.

A nonreciprocal microwave phase shifter or circulator includes a substrate, a transducer on a surface of the substrate and configured to reciprocally convert between electrical signals to acoustic waves, a first piezoelectric material configured to generate and transport acoustic waves from a signal applied to the transducer, and a thin film magnetic material configured to couple to acoustic waves through magnetoelastic coupling so as to have nonreciprocal magnetoelastic coupled acoustic wave transport. Phase shifts of acoustic waves through the thin film magnetic material in directions toward and away the transducer have significantly different magnitudes.

A method for fabricating a surface acoustic wave (SAW) device includes forming an interdigital transducer (IDT) having lead-out portions and arrays of interdigital electrodes on a substrate, wherein the interdigital electrodes include central portions, end portions, and intermediate portions between the end portions and the lead-out portions; forming a protective layer on the IDT; forming a first temperature compensation layer on the protective layer; forming openings in the first temperature compensation layer to expose portions of the protective layer on the central portions and the intermediate portions of the interdigital electrodes; and etching the exposed portions of the protective layer, and etching the central portions and the intermediate portions of the interdigital electrodes to a preset thickness, to form protruding structures at the end portions of the interdigital electrodes.

A radio frequency multiplexer comprises a piezoelectric substrate, a first surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of a first metal and a second metal layer disposed on the first metal layer and formed of a second metal having a higher density than the first metal, and a second surface acoustic wave resonator including interdigital transducer electrodes disposed on the piezoelectric substrate and having a first metal layer formed of the first metal, but lacking the second metal layer.

A method of manufacturing an acoustic wave device includes forming a multilayer piezoelectric substrate by forming a piezoelectric layer and forming a support substrate below the piezoelectric layer. The method also includes forming an interdigital transducer electrode including forming a first layer disposed over the piezoelectric layer, forming a second layer disposed over the first layer, the second layer being of a less dense material than the first layer, forming a third layer disposed over the second layer. The method also includes etching the third layer to form a pair of strips extending over one or more fingers of the interdigital transducer electrode and having a density that suppresses a transverse mode of the acoustic wave device.

An acoustic wave filter includes a first longitudinally coupled resonator including first and second IDT electrodes, and a second longitudinally coupled resonator including third and fourth IDT electrodes. Each IDT electrode includes a wide pitch electrode finger group and a narrow pitch electrode finger group. A number of electrode fingers in the wide pitch electrode finger group of the first IDT electrode is smaller than that in the wide pitch electrode finger group of the second IDT electrode by a percentage equal to or more than about 4.2% and equal to or less than about 23.5%. A number of the electrode fingers in the wide pitch electrode finger group of the IDT electrode third is smaller than that in the wide pitch electrode finger group of the fourth IDT electrode by a percentage equal to or more than about 9.5% and equal to or less than about 52.4%.

An acoustic wave device includes series resonators and parallel resonators formed on a main surface of a piezoelectric layer. The series resonators includes a first series resonator including first, second and third series-divided resonators and a second series resonator including fourth, fifth and sixth series-divided resonators. One of the first, second and third series-divided resonators which is disposed at a position where an electric signal is input first, has a first anti-resonance frequency. The others of the first, second and third series-divided resonators have a second anti-resonance frequency. One of the fourth, fifth and sixth series-divided resonators which is centrally disposed has the second anti-resonance frequency, the others of the fourth, fifth, and sixth series-divided resonators have the first anti-resonance frequency.

A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.