Patent classifications
H03H9/2426
Resonance device
A resonance device with improved precision of temperature control. The resonance device includes a platform; a resonator including a vibrator and one or more holding arms that connect the vibrator and the platform to each other such that a first groove is provided around the vibrator. Moreover, the resonance device includes a sensor with a measurement portion that measures temperature and a heater formed on the platform. A second groove is provided between the measurement portion and the heater.
Semiconductor package structure and method of manufacturing the same
The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.
METHODS AND DEVICES FOR MICROELECTROMECHANICAL RESONATORS
MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
Methods and devices for microelectromechanical resonators
MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
Methods and devices for microelectromechanical resonators
MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
ELECTRONIC PACKAGE STRUCTURE
The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.
Fin Field-Effect Transistor (FinFET) Resonator
An integrated circuit may include a resonator formed from FinFET devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. Each of the drive cells may include at least two drive transistors having fins coupled to a drive terminal. Each sense cell may include two sense transistors having one fin coupled to a sense terminal and another fin coupled to ground. Adjacent drive and sense cells may be separated by an intervening region that can accommodate a number of fins. Configured in this way, the resonator can exhibit a high quality factor, low phase noise, and can operate at a frequency that is less than the characteristic resonant frequency as defined by the fin pitch of the drive and sense transistors.
Method for generating high order harmonic frequencies and MEMS resonator
A method for generating high order harmonic frequencies includes: providing a piezoelectric resonant film; and inputting a driving signal with a single tone frequency for driving the piezoelectric resonant film to oscillate in a non-linear region so as to generate a plurality of high order harmonic frequencies. Therefore, the quantity of the high order harmonic frequencies can be adjusted by applying an electrical controlling method.
Resonant fin transistor (RFT)
Embodiments disclosed herein include resonators, such as resonant fin transistors (RFTs). In an embodiment a resonator comprises a substrate, a set of contact fins over the substrate, a first contact proximate to a first end of the set of contact fins, and a second contact proximate to a second end of the set of contact fins. In an embodiment, the resonator further comprises a set of skip fins over the substrate and adjacent to the set of contact fins. In an embodiment, the resonator further comprises a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.
Systems And Methods Resulting From The Parametric Coupling Of Mechanical And Electrical Resonator Assemblies And Systems And Methods To Parametrically Couple The Assemblies
A resonator-based comb generation system configured for stable frequency comb generation in a media environment across a range of media environment densities. A system configured for frequency comb generation in a media environment across a range of media environment densities can include a resonant mechanical assembly and a resonant electrical assembly, wherein the assemblies are non-linearly coupled. A microelectromechanical (MEM) resonator can be parametrically coupled to a resonant electrical circuit to serve as an electromechanical comb generation system.