The present disclosure relates to a Bulk Acoustic Wave (BAW) resonator with tunable electromechanical coupling. The disclosed BAW resonator includes a bottom electrode, a top electrode, and a multilayer transduction structure sandwiched therebetween. Herein, the multilayer transduction structure is composed of multiple transduction layers, and at least one of the transduction layers is formed of a ferroelectric material, whose polarization will vary with an electric field across the ferroelectric material. Upon adjusting direct current (DC) bias voltage across the bottom electrode and the top electrode, an overall polarization of the multilayer transduction structure and an overall electromechanical coupling coefficient of the multilayer transduction structure are capable of being changed. Once the change of the overall electromechanical coupling coefficient of the multilayer transduction structure is completed, the overall electromechanical coupling coefficient of the multilayer transduction structure will remain unchanged after removing the DC bias voltage.

The present disclosure relates to a Bulk Acoustic Wave (BAW) resonator with tunable electromechanical coupling. The disclosed BAW resonator includes a bottom electrode, a top electrode, and a multilayer transduction structure sandwiched therebetween. Herein, the multilayer transduction structure is composed of multiple transduction layers, and at least one of the transduction layers is formed of a ferroelectric material, whose polarization will vary with an electric field across the ferroelectric material. Upon adjusting direct current (DC) bias voltage across the bottom electrode and the top electrode, an overall polarization of the multilayer transduction structure and an overall electromechanical coupling coefficient of the multilayer transduction structure are capable of being changed. Once the change of the overall electromechanical coupling coefficient of the multilayer transduction structure is completed, the overall electromechanical coupling coefficient of the multilayer transduction structure will remain unchanged after removing the DC bias voltage.

A method of manufacturing a ceramic resonator radio frequency filter includes placing one or more first coaxial resonators on a printed circuit board, and placing one or more second coaxial resonators over the one or more first coaxial resonators so that the coaxial resonators are arranged in a stacked configuration on the printed circuit board. The method also includes electrically connecting the one or more first coaxial resonators and second coaxial resonators to the printed circuit board.

A method of manufacturing a ceramic resonator radio frequency filter includes placing one or more first coaxial resonators on a printed circuit board, and placing one or more second coaxial resonators over the one or more first coaxial resonators so that the coaxial resonators are arranged in a stacked configuration on the printed circuit board. The method also includes electrically connecting the one or more first coaxial resonators and second coaxial resonators to the printed circuit board.

A method of manufacturing a ceramic resonator radio frequency filter includes placing one or more first coaxial resonators on a printed circuit board, and placing one or more second coaxial resonators over the one or more first coaxial resonators so that the coaxial resonators are arranged in a stacked configuration on the printed circuit board. The method also includes electrically connecting the one or more first coaxial resonators and second coaxial resonators to the printed circuit board.

A method of manufacturing a ceramic resonator radio frequency filter includes placing one or more first coaxial resonators on a printed circuit board, and placing one or more second coaxial resonators over the one or more first coaxial resonators so that the coaxial resonators are arranged in a stacked configuration on the printed circuit board. The method also includes electrically connecting the one or more first coaxial resonators and second coaxial resonators to the printed circuit board.

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling C.sub.x/C.sub.o goes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises C.sub.x/C.sub.o without excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.

A ceramic resonator radio frequency filter includes a printed circuit board, one or more first coaxial resonators disposed on the printed circuit board, and one or more second coaxial resonators disposed over the one or more first coaxial resonators so that the one or more first coaxial resonators and one or more second coaxial resonators are arranged in a stacked configuration. The one or more first coaxial resonators and second coaxial resonators electrically connected to the printed circuit board.

A ceramic resonator radio frequency filter includes a printed circuit board, one or more first coaxial resonators disposed on the printed circuit board, and one or more second coaxial resonators disposed over the one or more first coaxial resonators so that the one or more first coaxial resonators and one or more second coaxial resonators are arranged in a stacked configuration. The one or more first coaxial resonators and second coaxial resonators electrically connected to the printed circuit board.

A microelectromechanical resonant switch (resoswitch) converts received radio frequency (RF) energy into a clock output. The resoswitch first accepts incoming amplitude- or frequency-shift keyed clock-modulated RF energy at a carrier frequency, filters it, provides power gain via resonant impact switching, and finally envelop detects impact impulses to demodulate and recover the carrier clock waveform. The resulting output derives from the clock signal that originally modulated the RF carrier, resulting in a local clock that shares its originator's accuracy. A bare push-pull 1-kHz RF-powered mechanical clock generator driving an on-chip inverter gate capacitance of 5 fF can potentially operate with only 5 pW of battery power, 200,000 times lower than a typical real-time clock. Using an off-chip inverter with 17.5 pF of effective capacitance, a 1-kHz push-pull resonator would consume 17.5 nW.