Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

An acoustic wave resonator includes comb-shaped electrodes each including electrode fingers and dummy electrode fingers, first tips of the electrode fingers of one of the comb-shaped electrodes and second tips of the dummy electrode fingers of the other facing each other, each dummy electrode finger including a first portion located closer to the corresponding second tip and a second portion located farther from the corresponding second tip than the first portion, the first portion being narrower in a short direction than the second portion, and an insulating film that is provided from an edge region of an overlap region to a first region, where the first portions of the dummy electrode fingers are located, of a dummy region and is provided in neither a central region of the overlap region nor a second region, where the second portions of the dummy electrode fingers are located, of the dummy region.

Provided is a joined body including a piezoelectric substrate and a polycrystalline spinel substrate provided on one main surface of the piezoelectric substrate, wherein the polycrystalline spinel substrate has a porosity of 0.005% or more and 0.6% or less.

Aspects of this disclosure relate to a surface acoustic wave resonator having a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate, a piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the surface acoustic wave resonator. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. Related surface acoustic wave filters, radio frequency modules, and wireless communication devices are also disclosed.

There is provided a SAW filter manufacturing method for manufacturing a SAW filter from a piezoelectric substrate having planned dividing lines set on a top surface of the piezoelectric substrate, and having a device including comb-shaped electrodes in regions demarcated by the planned dividing lines. The method includes a structure forming step of forming a structure having projections and depressions on an undersurface side of the piezoelectric substrate by irradiating the piezoelectric substrate with a laser beam of a wavelength absorbable by the piezoelectric substrate from the undersurface side of the piezoelectric substrate, and a dividing step of dividing the piezoelectric substrate along the planned dividing lines after the structure forming step.

Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.

An acoustic wave filter device includes first and second terminals, an inductor connected to the first terminal, and a longitudinally coupled resonator coupled between the inductor and the second terminal. The longitudinally coupled resonator includes at least one first IDT electrode coupled to the first terminal, and at least one second IDT electrode connected to the second terminal. A total capacitance value of the at least one first IDT electrode is greater than a total capacitance value of the at least one second IDT electrode.

A radio-frequency filter (10) includes a series arm circuit (11) and a parallel arm circuit (12). The series arm circuit (11) is disposed on a path connecting an input/output terminal (11m) and an input/output terminal (11n). The parallel arm circuit (12) is connected to a ground and to a node (x1) on the path. The series arm circuit (11) includes a series connecting circuit (11e) and a first variable frequency circuit (11a). The series connecting circuit (11e) includes a series arm resonator (s1) and a capacitor (C1). The first variable frequency circuit (11a) is connected in parallel with the series connecting circuit (11e) and varies the anti-resonant frequency of the series arm circuit (11). The first variable frequency circuit (11a) includes a capacitor (C2) and a switch (SW1) connected in series with each other. The series arm resonator (s1) and the capacitor (C1) are connected in series with each other.

A guided acoustic wave device includes a substrate, a lithium tantalate layer on the substrate, and a transducer on the lithium tantalate film. The lithium tantalate has a crystalline orientation defined by (YXl)Θ°, where Θ is between 10° and 37°. The inventors discovered that limiting the crystalline orientation of the lithium tantalate in this manner provides significant increases in the electromechanical coupling coefficient of the acoustic wave device, thereby increasing bandwidth and improving performance.

The present invention discloses a type of ultra-wide band SAW filter which comprises a first SAW resonator group and a second SAW resonator group that are connected to form a ladder structure. Each SAW resonator in the said first SAW resonator group has the same film thickness; each SAW resonator in the said second SAW resonator group has the same film thickness; the film thickness of each SAW resonator in the said first SAW resonator group is the same as or different from the film thickness of each SAW resonator in the said second SAW resonator group. The SAW filter according to the present invention can realize the pass-band non-parasitic mode response and is a high-performance ultra-wide band filter with a bandwidth of 6-20% of the center frequency and an insertion loss of less than 2 dB, and the present invention features small size, low cost and a broad application prospect in the field of military and civilian communications equipment.