A packaged acoustic wave filter component can include an acoustic wave device including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer. A support layer may be included over the acoustic wave device, and the packaged hybrid filter component can also include a bulk acoustic wave resonator over the support layer. A cap layer may extend over and encapsulate the bulk acoustic wave resonator. One or more external vias may extend through the support layer and the underlying layers of the acoustic wave device to provide electrical communication with the packaged bulk acoustic wave generator.

An acoustic wave filter component can include a surface acoustic wave device including a first piezoelectric layer, an interdigital transducer electrode on the first piezoelectric layer, and an additional layer, such as a temperature compensation layer, over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The additional layer may be a layer on which a surface acoustic wave of the surface acoustic wave device will propagate. The bulk acoustic wave resonator may include an air cavity, where a shape of the air cavity is defined in part by the additional layer.

An acoustic wave filter component can include an acoustic wave device including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate can include at least a support substrate and a piezoelectric layer. The acoustic wave device can include an interdigital transducer electrode on the piezoelectric layer. An additional layer can be located over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The acoustic wave device can be a boundary wave resonator, and one or more boundary wave resonators may be provided in a stacked arrangement, with the bulk acoustic wave resonator in the top layer of the stacked arrangement. The acoustic wave device can also be a temperature-compensated surface acoustic wave device.

Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing bulk wave suppression in a stacked electroacoustic device. One aspect includes a first substrate comprising a first surface and a second surface, where the second surface is opposite the first surface, a first AW resonator circuit positioned on the first surface of the first substrate, a plurality of elements including a first element, where the plurality of elements are positioned on the second surface of the first substrate, and where the first element is aligned with the first AW resonator circuit, and a second substrate comprising a first surface and a second surface, where the plurality of elements are positioned on the first surface of the second substrate, and where the plurality of elements create a cavity between the first substrate and the second substrate.

An acoustic wave filter component can include a surface acoustic wave device including a first piezoelectric layer, an interdigital transducer electrode on the first piezoelectric layer, and an additional layer, such as a temperature compensation layer, over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The additional layer may be a layer on which a surface acoustic wave of the surface acoustic wave device will propagate. The bulk acoustic wave resonator may include an air cavity, where a shape of the air cavity is defined in part by the additional layer.

Acoustic wave device includes: a piezoelectric substrate; a first IDT located on the piezoelectric substrate; and a second IDT located on the piezoelectric substrate and connected in series to the first IDT, wherein the first IDT and the second IDT share a single common bus bar as a first bus bar of two bus bars of the first IDT and a first bus bar of two bus bars of the second IDT, and the common bus bar has a width not more than two times a wavelength of an acoustic wave propagating through the first and second IDTs, the common bus bar connects to no dummy electrode finger facing a tip of an electrode finger connected to a second bus bar of the two bus bars of the first IDT and the second IDT across a gap.

A packaged acoustic wave filter component can include an acoustic wave device including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer. A support layer may be included over the acoustic wave device, and the packaged hybrid filter component can also include a bulk acoustic wave resonator over the support layer. A cap layer may extend over and encapsulate the bulk acoustic wave resonator. One or more external vias may extend through the support layer and the underlying layers of the acoustic wave device to provide electrical communication with the packaged bulk acoustic wave generator.

An acoustic wave filter component can include an acoustic wave device including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate can include at least a support substrate and a piezoelectric layer. The acoustic wave device can include an interdigital transducer electrode on the piezoelectric layer. An additional layer can be located over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The acoustic wave device can be a boundary wave resonator, and one or more boundary wave resonators may be provided in a stacked arrangement, with the bulk acoustic wave resonator in the top layer of the stacked arrangement. The acoustic wave device can also be a temperature-compensated surface acoustic wave device.

A stacked acoustic wave device structure can include at least one surface acoustic wave device that supports a bulk acoustic wave resonator. The surface acoustic wave device includes a first piezoelectric layer with an interdigital transducer electrode on the first piezoelectric layer that generate a surface acoustic wave. In addition, a layer is located above the surface acoustic wave device along which the surface wave propagates. The bulk acoustic wave resonator is supported by the layer, the bulk acoustic wave resonator including an air cavity in contact with the layer, and the bulk acoustic wave resonator further includes a second piezoelectric layer above the air cavity and electrodes on opposing sides of the second piezoelectric layer.

Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing bulk wave suppression in a stacked electroacoustic device. One aspect includes a first substrate comprising a first surface and a second surface, where the second surface is opposite the first surface, a first AW resonator circuit positioned on the first surface of the first substrate, a plurality of elements including a first element, where the plurality of elements are positioned on the second surface of the first substrate, and where the first element is aligned with the first AW resonator circuit, and a second substrate comprising a first surface and a second surface, where the plurality of elements are positioned on the first surface of the second substrate, and where the plurality of elements create a cavity between the first substrate and the second substrate.