A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.

In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

A composite acoustic wave filter device includes first and second acoustic wave filters. One end of the first acoustic wave filter with a pass band in a relatively low frequency range and one end of the second acoustic wave filter with a pass band in a relatively high frequency range are connected in common. A first end portion of a first parallel capacitance element and a third end portion of a second parallel capacitance element are connected to a signal line of the second acoustic wave filter. A ground-side end portion of the first parallel capacitance element is connected in common to a ground-side end portion of the first acoustic wave filter. A fourth end portion of the second parallel capacitance element is connected to a ground potential.

Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first section of a shared input busbar, a first section of a shared output busbar, and an electrode structure between the first section of the shared input busbar and the first section of the shared output busbar, the electrode structure configured for a resonance. The split resonator also comprises a detuned resonator. The detuned resonator includes a second section of the shared input busbar, a second section of the shared output busbar, and a detuned electrode structure between the second section of the shared input busbar and the second section of the shared output busbar, the detuned electrode structure configured for a detuned resonance different from the resonance.

An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.

An acoustic wave device includes first and second acoustic wave elements. The first acoustic wave element is disposed on a piezoelectric substrate, and includes at least one first IDT electrode. The second acoustic wave element is disposed on the piezoelectric substrate, and includes at least one second IDT electrode. The first and second acoustic wave elements are adjacent to each other in the direction of acoustic wave propagation. A diffracting component that diffracts an acoustic wave is disposed between the first IDT electrode and the second IDT electrode. The diffracting component includes a gap that defines and functions as a slit to diffract an acoustic wave.

In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.