A duplexer includes a piezoelectric substrate, a receiving filter formed on the piezoelectric substrate, the receiving filter includes a plurality of resonators, and a transmitting filter formed on the piezoelectric substrate, the transmitting filter includes a plurality of resonators. One of the resonators of the receiving filter is a multi-mode type acoustic wave resonator having a capacitance that is two times or more the average capacitance of the other resonators formed on the piezoelectric substrate.

A method includes transmitting a focused ultrasound wave into a medium to form (i) an ultrasound intensity well within the medium that exhibits a first range of acoustic pressure and (ii) a surrounding region of the medium that surrounds the ultrasound intensity well and exhibits a second range of acoustic pressure that exceeds the first range of acoustic pressure. The method further includes confining an object within the ultrasound intensity well. Additionally, an acoustic lens is configured to be acoustically coupled to an acoustic transducer. The acoustic lens has a varying longitudinal thickness that increases proportionally with respect to increasing azimuth angle of the acoustic lens. Another acoustic lens is configured to be acoustically coupled to an acoustic transducer. The acoustic lens includes a plurality of segments. Each of the plurality of segments has a varying longitudinal thickness that increases proportionally with respect to increasing azimuth angle of the segment.

A low velocity surface acoustic wave device, and a method of reducing the velocity of a surface acoustic wave generated by a surface acoustic wave device are described, the device including a piezoelectric layer, an interdigital transducer disposed on the piezoelectric substrate and configured to generate a surface acoustic wave in response to an electrical, and a temperature coefficient of frequency compensation layer disposed partially on the interdigital transducer and partially on the piezoelectric substrate, the temperature coefficient of frequency compensation layer having a low velocity layer disposed within it configured to reduce the velocity of a surface acoustic wave generated by the interdigital transducer, the method including disposing a wave velocity adjustment layer, the wave velocity adjustment layer being a low velocity layer, within a temperature compensation layer of the surface acoustic wave device.

A filter circuit includes a plurality of first resonators provided in a series arm, a plurality of second resonators provided in a parallel arm, and at least one or more third resonators that are electrically connected in series with each other and are electrically connected in parallel with the first resonators in the series arm. An anti-resonant frequency of the third resonators is lower than an anti-resonant frequency of the second resonators. A combined capacitance of the at least one or more third resonators electrically connected in series with each other is smaller than an electrostatic capacitance of the second resonators.

A filter module includes an inductor, a filter including first wiring, and second wiring between the inductor and the first wiring and being a direct-current floating potential. The inductor and the first wiring are magnetically coupled, the inductor and the second wiring are magnetically coupled, and the first wiring and the second wiring are capacitively coupled.

A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

A ladder filter in which the pass band is defined by serial arm resonators and first and second parallel arm resonators includes the serial arm resonators, the first and second parallel arm resonators, and a third parallel arm resonator. The third parallel arm resonator is connected in parallel to the first parallel arm resonator, the electrostatic capacitance of the third parallel arm resonator is smaller than that of the first parallel arm resonator, and the anti-resonant frequency of the third parallel arm resonator is positioned outside the pass band of the ladder filter. The anti-resonant frequency of the first parallel arm resonator is positioned at the high frequency side of the anti-resonant frequencies of the second parallel arm resonators.

An elastic wave device includes an LiNbO.sub.3 substrate, a first elastic wave resonator including a first IDT electrode and a first dielectric film, and a second elastic wave resonator including a second IDT electrode and a second dielectric film. A Rayleigh wave travels along at least one surface of the elastic wave device. A thickness of the first dielectric film differs from a thickness of the second dielectric film. A propagation direction of an elastic wave in the first elastic wave resonator coincides with a propagation direction of an elastic wave in the second elastic wave resonator. Euler angles of the LiNbO.sub.3 substrate fall within a range of (0°±5°, θ, 0°±10°).

A high-frequency apparatus includes a resin substrate, a first device including a substrate and provided on the resin substrate, and a second device provided adjacent to the first device on the resin substrate. Each of the first device and the second device includes an acoustic wave device. The second device includes a piezoelectric substrate and a functional element provided on the piezoelectric substrate. The substrate of the first device includes Si or a laminated material including Si. The piezoelectric substrate of the second device includes LiTaO.sub.3, LiNbO.sub.3, or a laminated material including LiTaO.sub.3 or LiNbO.sub.3. The resin substrate includes glass.