A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.

Embodiments of this application disclose a drive circuit of a power device and a drive system, to drive the power device by using a small quantity of components. The drive circuit of the power device includes: a drive signal generation circuit, configured to generate a drive signal; a resistor and a capacitor that are connected in series, coupled to the drive signal generation circuit and the power device, and configured to control turn-on and turn-off of the power device based on the drive signal; and a voltage clamp circuit, coupled to the power device, and configured to control a gate voltage of the power device to be not greater than a gate withstand voltage.

A terminal protection voltage detector circuit is provided for protecting a terminal block having output terminals in a power supply apparatus. A current detector detects output currents flowing from the power supply apparatus to loads via output terminals, and a first comparator configured to compare a sum of the detected output currents with a predetermined first threshold and output a first comparison result signal when the sum of output currents is larger than or equal to the first threshold. A second comparator configured to compare a maximum value of detected output currents with a predetermined second threshold and output a second comparison result signal when the maximum value is equal to or larger than the second threshold. A current stop circuit stops a current from flowing from the power supply apparatus to the output terminals based on the first or second comparison result signal.

A switch device includes an output transistor, an overcurrent protection circuit configured to be capable of performing an overcurrent protection operation in which magnitude of target current flowing in the output transistor is limited to a predetermined upper limit current value or less, and a control circuit configured to be capable of controlling a state of the output transistor and capable of changing the upper limit current value among a plurality of current values including a predetermined first current value and a predetermined second current value less than the first current value. The control circuit can limit the magnitude of the target current to the first current value or less in response to the magnitude of the target current reaching the first current value, and then change the upper limit current value to the second current value.

An electronic device includes a first group III nitride transistor and an electrostatic discharge (ESD) protection circuit. an electronic device may include a first group III nitride transistor and an ESD protection circuit. The ESD protection circuit may include a first transistor, a second transistor, and a third transistor. The first transistor may have a source and a gate connected to each other and electrically connected to a gate of the first group III nitride transistor. The second transistor may have a source and a gate connected to each other and electrically connected to a source of the first group III nitride transistor. The third transistor may have a drain electrically connected to the gate of the first group III nitride transistor, a gate electrically connected to a drain of the first transistor and to a drain of the second transistor, and a source electrically connected to the source of the first group III nitride transistor.

A signal detection circuit includes: a voltage dividing circuit having at least a first pair of voltage dividing capacitors connected in series for dividing an input voltage and configured to output a divided voltage, and a detection circuit configured to detect the divided voltage. The first pair of voltage dividing capacitors are included in one semiconductor device. The semiconductor device includes: (i) a semiconductor substrate, (ii) a first conductor layer, (iii) a first dielectric layer, (iv) a second conductor layer, (v) a second dielectric layer, (vi) a third conductor layer, and (vii) a short-circuit portion configured to short-circuit the first conductor layer and the semiconductor substrate.

A voltage level-shifting circuit for an integrated circuit includes an input terminal receiving a voltage signal referenced to an input/output (PO) voltage level. A transistor overvoltage protection circuit includes a first p-type metal oxide semiconductor (PMOS) transistor includes a source coupled to the second voltage supply, a gate receiving an enable signal, and a drain connected to a central node. A first n-type metal oxide semiconductor (NMOS) transistor includes a drain connected to the central node, a gate connected to the input terminal, and a source connected to an output terminal. A second NMOS transistor includes a drain connected to the input terminal, a gate connected to the central node, and a source connected to the output terminal.

A resistance device (100) includes a field-effect transistor (TN) and a voltage applying circuit (1). The voltage applying circuit (1) applies a control voltage (Vgs) between the gate and source of the field-effect transistor (TN) according to a temperature (T) to control a resistance value (R) between the drain and source of the field-effect transistor (TN). The control voltage (Vgs) is a voltage obtained by adding a correction voltage (Vc) to a reference voltage (Vgs0). The correction voltage (Vc) depends on the temperature (T) and is set to be zero at a first temperature (T1).

A drive device for driving a voltage-controlled semiconductor element. The drive device includes: a drive circuit connected to the gate of the semiconductor element via a gate resistor; a delay circuit connected to the drive circuit, for delaying a drive signal output from the drive circuit until a gate voltage of the semiconductor element enters a Miller effect period, which is a period during which the gate voltage transitionally changes, the gate voltage having temperature dependency on a chip temperature of the semiconductor element; a one-shot circuit connected to the delay circuit, for outputting a pulse signal with a pulse width shorter than the Miller effect period; a comparator that compares the gate voltage with a reference voltage; and an AND circuit that outputs an overheat detection signal in response to the gate voltage exceeding the reference voltage.

A semiconductor device includes a first switch and a first driver. The first switch selects and outputs one of a power supply potential and a generated potential as a first switch output potential based on a synchronization signal from a transmission circuit and a delayed signal delayed from the synchronization signal. The first driver charges a gate of a bipolar transistor element based on the synchronization signal of the transmission circuit and the first switch output potential.